Reference health

Optical properties of extended and localized states in <i>m</i>-plane InGaN quantum wells

20/20 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 20 checked references that resolve

resolves10.1557/PROC-743-L5.5

Microscopic Description of Radiative Recombinations in InGaN/GaN Quantum Systems

resolves10.1063/1.3605253

Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells

resolves10.1103/PhysRevB.67.041306

Nonpolar<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">GaN</mml:mi><mml:mo>(</mml:mo><mml:mn>11</mml:mn><mml:mn/><mml:mi>¯</mml:mi><mml:mn>0</mml:mn><mml:mn>0</mml:mn><mml:mo>)</mml:mo></mml:math>multiple quantum wells grown on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>γ</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">LiAlO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mn/><mml:mo>(</mml:mo><mml:mn>100</mml:mn><mml:mo>)</mml:mo><mml:mn/></mml:math>by plasma-assisted molecular-beam epitaxy

resolves10.1116/1.2746354

Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

resolves10.1063/1.3460278

Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells

resolves10.1088/0268-1242/27/2/024001

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

resolves10.1063/1.3502482

Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

resolves10.1063/1.3594239

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

resolves10.1063/1.4729033

Photoexcited carrier dynamics in AlInN/GaN heterostructures

resolves10.1063/1.1620677

Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy

resolves10.1063/1.3614557

Auger recombination in GaInN/GaN quantum well laser structures

resolves10.1063/1.3570656

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

resolves10.1103/PhysRevB.65.075202

Electronic band structure of wurtzite GaN under biaxial strain in the<i>M</i>plane investigated with photoreflectance spectroscopy

resolves10.1103/PhysRevB.58.R15977

Temperature dependence of the radiative lifetime in GaN

resolves10.1088/0953-8984/20/21/215223

The effects of crystallographic orientation and strain on the properties of excitonic emission from wurtzite InGaN/GaN quantum wells

resolves10.1088/0022-3727/41/15/155116

Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects

resolves10.1063/1.2741607

Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395to455nm

resolves10.1063/1.3083074

Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

resolves10.1063/1.2857467

Screening dynamics of intrinsic electric field in AlGaN quantum wells

resolves10.1063/1.2903592

Excitonic properties of polar, semipolar, and nonpolar InGaN∕GaN strained quantum wells with potential fluctuations

The 1 reference without a DOI — listed, not checked

no DOI — not checkedEmission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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