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Giant secondary grain growth in Cu films on sapphire

https://doi.org/10.1063/1.4817829
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26/26 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 26 checked references that resolve
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Epitaxial grain growth in thin metal films
resolves10.1021/nn201207c
Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates
resolves10.1021/nl300397v
Large Physisorption Strain in Chemical Vapor Deposition of Graphene on Copper Substrates
resolves10.1103/PhysRevB.84.155425
Origin of the mosaicity in graphene grown on Cu(111)
resolves10.1021/nl102788f
Graphene Islands on Cu Foils: The Interplay between Shape, Orientation, and Defects
resolves10.1007/s10853-006-0073-0
Bonding at copper–alumina interfaces established by different surface treatments: a critical review
resolves10.1016/j.actamat.2006.02.011
Epitaxy and bonding of Cu films on oxygen-terminated α-Al2O3(0001) surfaces
resolves10.1063/1.2794025
Control of bonding and epitaxy at copper/sapphire interface
resolves10.1016/j.actamat.2011.05.008
Orientation relationships of copper crystals on c-plane sapphire
resolves10.1146/annurev.matsci.30.1.159
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resolves10.1063/1.336194
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resolves10.1016/0254-0584(95)01512-4
Formation of giant-grain copper interconnects by a low-energy ion bombardment process for high-speed ULSIs
resolves10.1557/JMR.2008.0080
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resolves10.1002/pssb.201147495
Phase field modeling of grain growth in thin films on rigid substrates
resolves10.1146/annurev-matsci-070511-155048
Solid-State Dewetting of Thin Films
resolves10.1007/BF03221433
The Thermodynamics and Kinetics of film agglomeration
resolves10.1063/1.1722742
Theory of Thermal Grooving
resolves10.1063/1.4817829
Giant secondary grain growth in Cu films on sapphire
resolves10.1063/1.4754013
Epitaxial (111) films of Cu, Ni, and CuxNiy on α−Al2O3 (0001) for graphene growth by chemical vapor deposition
resolves10.1063/1.3569143
High quality, transferrable graphene grown on single crystal Cu(111) thin films on basal-plane sapphire
resolves10.1016/j.matlet.2011.06.047
Direct evidence of advantage of Cu(111) for graphene synthesis by using Raman mapping and electron backscatter diffraction
resolves10.1016/j.carbon.2011.08.002
Epitaxial growth of large-area single-layer graphene over Cu(1 1 1)/sapphire by atmospheric pressure CVD
resolves10.1016/j.actamat.2005.07.036
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The 3 references without a DOI — listed, not checked
no DOI — not checkedThe Foundations of Vacuum Coating Technology
no DOI — not checkedA historical review of epitaxy
no DOI — not checkedObtaining different orientation relationships for Cu films grown on (0001) α-Al2O3 substrates by magnetron sputtering
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