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Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film

https://doi.org/10.1063/1.4935025
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1 of 33 checkable references need attention · checked 2026-07-23

At the dated check, the references listed below either did not resolve in Crossref or DataCite, or carried a retraction notice. Each one is shown with the registry record that put it there.

References needing attention

does not resolve to a known work10.1002/1521-3951(200212)234:3<801::AID-PSSB801>3.0.CO;2-W
The 32 checked references that resolve
resolves10.1103/PhysRevB.10.676
Fundamental energy gap of GaN from photoluminescence excitation spectra
resolves10.1063/1.4759003
Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes
resolves10.1002/pssc.200983522
InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength
resolves10.1143/APEX.4.052101
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
resolves10.1063/1.4820839
Photoexcited carrier recombination in wide <i>m</i>-plane InGaN/GaN quantum wells
resolves10.1063/1.4869459
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
resolves10.1063/1.3226108
Time-resolved luminescence studies of proton-implanted GaN
resolves10.1143/JJAP.36.L459
Growth of Self-Organized GaN Nanostructures on Al<sub>2</sub>O<sub>3</sub>(0001) by RF-Radical Source Molecular Beam Epitaxy
resolves10.7567/JJAP.52.08JD09
Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17–22%)
resolves10.7567/JJAP.52.08JE18
633 nm Red Emissions from InGaN Nanocolumn Light-Emitting Diode by Radio Frequency Plasma Assisted Molecular Beam Epitaxy
resolves10.7567/APEX.7.112102
Directional radiation beam from yellow-emitting InGaN-based nanocolumn LEDs with ordered bottom-up nanocolumn array
resolves10.7567/JJAP.54.04DJ03
Single InGaN nanocolumn spectroscopy
resolves10.1002/pssc.201200317
Optical properties of InGaN/GaN nanocolumns in yellow‐to‐red region
resolves10.1016/j.jcrysgro.2006.11.036
Structural and optical properties of GaN nanocolumns grown on (0 0 0 1) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy
resolves10.1063/1.3280032
Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching
resolves10.1063/1.3443734
Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate
resolves10.7567/APEX.6.012101
Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors
resolves10.1063/1.4905854
High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells
resolves10.7567/JJAP.51.072102
Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes
resolves10.1063/1.4825124
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
resolves10.1063/1.2785135
Auger recombination in InGaN measured by photoluminescence
resolves10.1109/JQE.2014.2317732
On the Carrier Injection Efficiency and Thermal Property of InGaN/GaN Axial Nanowire Light Emitting Diodes
resolves10.1063/1.4754079
Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
resolves10.1063/1.4793637
Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer
resolves10.1063/1.1433164
Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
resolves10.1063/1.4830366
Room temperature excitonic recombination in GaInN/GaN quantum wells
resolves10.1063/1.4820395
Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells
resolves10.1016/j.jcrysgro.2008.11.056
Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays
resolves10.1063/1.3540501
High internal and external quantum efficiency InGaN/GaN solar cells
resolves10.1103/PhysRevLett.60.535
Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure
resolves10.1063/1.3400215
Confinement in PbSe wires grown by rf magnetron sputtering
resolves10.1063/1.121911
Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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