Reference health
Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product
29/29 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 29 checked references that resolve
resolves10.1109/JPROC.2008.2004313
Magnetoresistive Random Access Memory: The Path to Competitiveness and Scalability
resolves10.1103/PhysRevB.54.9353
Emission of spin waves by a magnetic multilayer traversed by a current
resolves10.1063/1.3527962
Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices
resolves10.1109/LED.2010.2082487
Low Write-Energy Magnetic Tunnel Junctions for High-Speed Spin-Transfer-Torque MRAM
resolves10.1109/TED.2010.2043389
True Energy-Performance Analysis of the MTJ-Based Logic-in-Memory Architecture (1-Bit Full Adder)
resolves10.1143/APEX.1.091301
Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions
resolves10.1038/nmat3172
Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses
resolves10.1063/1.4753816
Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
resolves10.1126/science.1136629
Electric Field-Induced Modification of Magnetism in Thin-Film Ferromagnets
resolves10.1038/nnano.2008.406
Large voltage-induced magnetic anisotropy change in a few atomic layers of iron
resolves10.1063/1.3429592
Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures
resolves10.1038/nmat3130
Electrical control of the ferromagnetic phase transition in cobalt at room temperature
resolves10.1063/1.3595318
Coercivity change in an FePt thin layer in a Hall device by voltage application
resolves10.1063/1.4751035
Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product
resolves10.1063/1.4818676
In-plane magnetic field dependence of electric field-induced magnetization switching
resolves10.1088/0022-3727/46/7/074004
Voltage-induced switching in magnetic tunnel junctions with perpendicular magnetic anisotropy
resolves10.1109/TMAG.2015.2443124
Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling
resolves10.1038/nphys2298
Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer
resolves10.1103/PhysRevLett.108.197203
Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions
resolves10.1103/PhysRevB.84.064413
Effect of subvolume excitation and spin-torque efficiency on magnetic switching
resolves10.1063/1.3617429
Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
resolves10.1063/1.4892924
Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm
resolves10.1063/1.4773342
Electric-field-induced thermally assisted switching of monodomain magnetic bits
The 1 reference without a DOI — listed, not checked
no DOI — not checked2023061715134288100_c11
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