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Effect of defect-induced carrier scattering on the thermoelectric power of graphene

27/27 checkable references clean · checked 2026-07-25

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 27 checked references that resolve

resolves10.1021/nn401933v

Gigahertz Integrated Graphene Ring Oscillators

resolves10.1021/nn404097s

Efficient Heat Dissipation of Photonic Crystal Microcavity by Monolayer Graphene

resolves10.1038/nnano.2010.172

Boron nitride substrates for high-quality graphene electronics

resolves10.1021/nl0731872

Superior Thermal Conductivity of Single-Layer Graphene

resolves10.1103/PhysRevB.82.073410

Two-dimensional carbon semiconductor: Density functional theory calculations

resolves10.1038/srep11962

Defect-Engineered Heat Transport in Graphene: A Route to High Efficient Thermal Rectification

resolves10.1063/1.3615290

Mechanical and thermal transport properties of graphene with defects

resolves10.1021/nn401992q

Conduction Tuning of Graphene Based on Defect-Induced Localization

resolves10.1038/ncomms4186

Effect of defects on the intrinsic strength and stiffness of graphene

resolves10.1039/C5CP04422G

Defect-engineered graphene chemical sensors with ultrahigh sensitivity

resolves10.1021/nn404746h

Enhanced Chemical Reactivity of Graphene Induced by Mechanical Strain

resolves10.1038/srep05085

A Bond-order Theory on the Phonon Scattering by Vacancies in Two-dimensional Materials

resolves10.1116/1.4926378

Precise control of defects in graphene using oxygen plasma

resolves10.1016/j.carbon.2009.12.057

Quantifying ion-induced defects and Raman relaxation length in graphene

resolves10.1021/nl201432g

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies

resolves10.1021/nl300901a

Probing the Nature of Defects in Graphene by Raman Spectroscopy

resolves10.1103/PhysRevB.64.075414

Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon

resolves10.1088/2053-1583/aa57fc

Enhancement of graphene thermoelectric performance through defect engineering

resolves10.1103/PhysRevLett.102.096807

Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene

resolves10.1103/PhysRevB.83.113403

Effect of charged impurities on the thermoelectric power of graphene near the Dirac point

resolves10.1103/PhysRevB.86.155414

Effect of carrier mobility on magnetothermoelectric transport properties of graphene

resolves10.1002/aelm.201500175

Enhancing the Thermoelectric Device Performance of Graphene Using Isotopes and Isotopic Heterojunctions

resolves10.1103/PhysRevLett.98.186806

Carrier Transport in Two-Dimensional Graphene Layers

resolves10.1073/pnas.0704772104

A self-consistent theory for graphene transport

resolves10.1038/nphys935

Charged-impurity scattering in graphene

resolves10.1103/PhysRevLett.116.136802

Enhanced Thermoelectric Power in Graphene: Violation of the Mott Relation by Inelastic Scattering

resolves10.1103/PhysRevLett.102.166808

Anomalous Thermoelectric Transport of Dirac Particles in Graphene

The 2 references without a DOI — listed, not checked

no DOI — not checkedSemiconductor Thermoelements and Thermoelectric Cooling

no DOI — not checkedSemiconductor Physics: An Introduction

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-25 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

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