Reference health
Controlling n-type conductivity of <i>β</i>-Ga2O3 by Nb doping
19/19 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 19 checked references that resolve
resolves10.1109/LED.2015.2512279
Field-Plated Ga<sub>2</sub>O<sub>3</sub>MOSFETs With a Breakdown Voltage of Over 750 V
resolves10.1063/1.4984904
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
resolves10.1063/1.3674287
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
resolves10.1143/JJAP.47.8506
Growth of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by the Edge-Defined, Film Fed Growth Method
resolves10.1063/1.3642962
Electrical properties of <i>β</i>-Ga2O3 single crystals grown by the Czochralski method
resolves10.1063/1.4945267
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on <i>n</i>––Ga2O3 drift layers grown by halide vapor phase epitaxy
resolves10.1063/1.4979789
High pulsed current density <i>β</i>-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
resolves10.1063/1.371289
Role of oxygen vacancy defect states in the <i>n</i>-type conduction of β-Ga2O3
resolves10.1063/1.2919728
Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
resolves10.1143/APEX.5.035502
Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
resolves10.7567/APEX.10.041102
Ge doping of β-Ga<sub>2</sub>O<sub>3</sub> films grown by plasma-assisted molecular beam epitaxy
resolves10.1103/PhysRevB.94.195203
Doping of
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
with transition metals
resolves10.1103/PhysRevB.68.155207
Donor structure and electric transport mechanism in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1016/0022-4596(78)90017-8
Some observations on the photoluminescence of doped β-galliumsesquioxide
resolves10.1063/1.4816759
Correlation between blue luminescence intensity and resistivity in <i>β</i>-Ga2O3 single crystals
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