Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 29 checked references that resolve
resolves10.1063/1.4952609Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3
resolves10.1063/1.4913587All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3
resolves10.1063/1.4901963High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide
resolves10.1063/1.4942366BaSnO3 as a channel material in perovskite oxide heterostructures
resolves10.1116/1.4959004Structure and optical band gaps of (Ba,Sr)SnO3 films grown by molecular beam epitaxy
resolves10.1103/PhysRevB.86.165205Physical properties of transparent perovskite oxides (Ba,La)SnO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>with high electrical mobility at room temperature
resolves10.1063/1.4770299Composition dependent metal-semiconductor transition in transparent and conductive La-doped BaSnO3 epitaxial films
resolves10.1021/jp500100aOptical and Electrical Properties of Sol–Gel Derived Ba<sub>1–<i>x</i></sub>La<sub><i>x</i></sub>SnO<sub>3</sub> Transparent Conducting Films for Potential Optoelectronic Applications
resolves10.1063/1.4919969Structure and transport in high pressure oxygen sputter-deposited BaSnO<sub>3−δ</sub>
resolves10.1063/1.4939686Gd-doped BaSnO3: A transparent conducting oxide with localized magnetic moments
resolves10.1021/ic034551cProbing the Electronic Structures of Ternary Perovskite and Pyrochlore Oxides Containing Sn<sup>4+</sup> or Sb<sup>5+</sup>
resolves10.1038/ncomms15167Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1
resolves10.1143/JPSJ.61.1867Metal-Insulator Transition with Oxygen Content in CaVO<sub>3-<i>y</i></sub>
resolves10.1103/PhysRevB.54.16574Metal-insulator transition in oxygen-deficient<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">LaNiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>perovskites
resolves10.1021/cm4019309Electrical and Optical Properties of Sb-Doped BaSnO<sub>3</sub>
resolves10.1063/1.4946762Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions
resolves10.1103/PhysRevB.87.161201Defect engineering of BaSnO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>for high-performance transparent conducting oxide applications
resolves10.1039/C6TC01007EOxygen stoichiometry, conductivity and gas sensing properties of BaSnO
<sub>3</sub>
resolves10.7567/APEX.7.033006Room-temperature ferromagnetism in transparent Mn-doped BaSnO<sub>3</sub>epitaxial films
resolves10.1063/1.4874895Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3
resolves10.1557/JMR.1987.0768X-ray photoemission spectroscopy of the 90 K superconductor Ba<sub>2</sub>YCu<sub>3</sub>O<sub>7−δ</sub>
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