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Electron redistribution and energy transfer in graphene/MoS2 heterostructure

29/29 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 29 checked references that resolve

resolves10.1038/ncomms11504

The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

resolves10.1021/acs.nanolett.6b02430

Graphene-Based Fluorescence-Quenching-Related Fermi Level Elevation and Electron-Concentration Surge

resolves10.1002/adma.201706561

High Detectivity and Transparent Few‐Layer MoS2/Glassy‐Graphene Heterostructure Photodetectors

resolves10.1016/j.cplett.2011.03.031

Quenching of fluorescence of aromatic molecules by graphene due to electron transfer

resolves10.1063/1.1699044

A Theory of Sensitized Luminescence in Solids

resolves10.1021/acs.nanolett.6b00801

Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures

resolves10.1126/sciadv.1700324

Photocarrier generation from interlayer charge-transfer transitions in WS 2 -graphene heterostructures

resolves10.1038/ncomms6622

Electron transfer and coupling in graphene–tungsten disulfide van der Waals heterostructures

resolves10.1103/PhysRevX.8.011007

Charge Versus Energy Transfer in Atomically Thin Graphene-Transition Metal Dichalcogenide van der Waals Heterostructures

resolves10.1088/2053-1583/2/2/022001

k · p theory for two-dimensional transition metal dichalcogenide semiconductors

resolves10.1021/am508569m

Controlled van der Waals Epitaxy of Monolayer MoS2 Triangular Domains on Graphene

resolves10.1063/1.4774090

Band offsets and heterostructures of two-dimensional semiconductors

resolves10.1002/smll.201303670

High Responsivity and Gate Tunable Graphene‐MoS2 Hybrid Phototransistor

resolves10.1038/srep03826

Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

resolves10.1038/nnano.2013.20

Orientation of luminescent excitons in layered nanomaterials

resolves10.1038/nphoton.2010.186

Graphene photonics and optoelectronics

resolves10.1126/science.1171245

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

resolves10.1021/nn5020819

Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes

resolves10.1063/1.5001790

Oxygen-assisted synthesis of hexagonal boron nitride films for graphene transistors

resolves10.1038/nnano.2012.96

Control of valley polarization in monolayer MoS2 by optical helicity

resolves10.1103/PhysRevLett.105.136805

Atomically Thin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi>MoS</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> : A New Direct-Gap Semiconductor

resolves10.1103/PhysRevB.89.125406

Photoluminescence of freestanding single- and few-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>MoS</mml:mtext><mml:mn>2</mml:mn></mml:msub></mml:math>

resolves10.1038/nnano.2010.279

Single-layer MoS2 transistors

resolves10.1103/PhysRevLett.97.266407

Nonadiabatic Kohn Anomaly in a Doped Graphene Monolayer

resolves10.1038/nmat1846

Breakdown of the adiabatic Born–Oppenheimer approximation in graphene

resolves10.1103/PhysRevB.77.125416

Adsorption of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">H</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi mathvariant="normal">O</mml:mi></mml:mrow></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:msub><mml:mi mathvariant="normal">H</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>, CO,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">N</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>, and NO on graphene: A first-principles study

resolves10.1103/PhysRevB.85.161403

Symmetry-dependent phonon renormalization in monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>transistor

resolves10.1021/nl5021975

Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide

resolves10.1103/PhysRevB.89.125427

Exciton-exciton annihilation in MoSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>monolayers

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