Reference health
Hydrogen concentration at a-Si:H/c-Si heterointerfaces—The impact of deposition temperature on passivation performance
1 of 45 checkable references need attention · checked 2026-07-23
At the dated check, the references listed below either did not resolve in Crossref or DataCite, or carried a retraction notice. Each one is shown with the registry record that put it there.
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References needing attention
does not resolve to a known work10.1002/(sici)1099-159x(199703/04)5:2<79::aid-pip155>3.0.co;2-j
The 44 checked references that resolve
resolves10.1016/j.solmat.2017.06.024
Exceeding conversion efficiency of 26% by heterojunction interdigitated back contact solar cell with thin film Si technology
resolves10.1016/j.solmat.2017.06.023
Increasing the efficiency of silicon heterojunction solar cells and modules by light soaking
resolves10.1016/j.solmat.2008.10.020
Advances in a-Si:H/c-Si heterojunction solar cell fabrication and characterization
resolves10.1143/jjap.31.3518
Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)
resolves10.1103/physrevb.76.035326
Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
resolves10.1063/1.3641899
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
resolves10.1063/1.3455900
Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions
resolves10.1103/physrevb.85.113302
Kinetics of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si:H bulk defect and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si:H/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>c</mml:mi></mml:math>-Si interface-state reduction
resolves10.1002/pip.2959
Device physics underlying silicon heterojunction and passivating‐contact solar cells: A topical review
resolves10.1063/1.2432297
Abruptness of a-Si:H∕c-Si interface revealed by carrier lifetime measurements
resolves10.1063/1.2426900
Impact of epitaxial growth at the heterointerface of a-Si:H∕c-Si solar cells
resolves10.1016/j.tsf.2012.02.020
Impact of a-Si:H hydrogen depth profiles on passivation properties in a-Si:H/c-Si heterojunctions
resolves10.1016/s0169-4332(02)00876-0
Accurate SIMS depth profiling for ultra-shallow implants using backside SIMS
resolves10.1116/1.589798
Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants: Problems and solutions
resolves10.1063/1.334142
Secondary ion mass spectrometry: Depth profiling of shallow As implants in silicon and silicon dioxide
resolves10.1063/1.2559975
Effects of a-Si:H layer thicknesses on the performance of a-Si:H∕c-Si heterojunction solar cells
resolves10.1063/1.1457535
Depth profiling of silicon–hydrogen bonding modes in amorphous and microcrystalline Si:H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry
resolves10.1016/j.egypro.2017.09.310
Recent developments in the industrial silicon heterojunction process chain enabling efficiencies up to 22.7%
resolves10.1016/j.egypro.2016.07.115
Ozone-based Surface Conditioning Focused on an Improved Passivation for Silicon Heterojunction Solar Cells
resolves10.1016/j.apsusc.2012.03.170
Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurements
resolves10.1007/s10854-014-1925-z
Low-temperature sintering properties of the screen-printed silver paste for a-Si:H/c-Si heterojunction solar cells
resolves10.1063/1.367101
Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation
resolves10.1063/1.117723
Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
resolves10.1016/j.surfrep.2014.08.002
Hydrogen detection near surfaces and shallow interfaces with resonant nuclear reaction analysis
resolves10.1016/s1359-0286(02)00039-6
Below-surface behavior of hydrogen studied by nuclear reaction analysis
resolves10.3791/53452
Quantification of Hydrogen Concentrations in Surface and Interface Layers and Bulk Materials through Depth Profiling with Nuclear Reaction Analysis
resolves10.1063/1.337144
Investigation of the growth kinetics of glow-discharge hydrogenated amorphous silicon using a radical separation technique
resolves10.1103/physrevb.76.073202
Relation of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mo></mml:mo><mml:mi mathvariant="normal">H</mml:mi></mml:mrow></mml:math>stretching frequency to the nanostructural<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mo></mml:mo><mml:mi mathvariant="normal">H</mml:mi></mml:mrow></mml:math>bulk environment
resolves10.1103/physrevlett.54.562
Orientational Ordering and Melting of Molecular<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">H</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>in an<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi></mml:math>-Si Matrix: NMR Studies
resolves10.1016/0379-6787(89)90056-2
Small-angle X-ray scattering studies of microvoids in a-SiC:H and a-Si:H
resolves10.1103/physrevb.83.195205
Dielectric function of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>a</mml:mi></mml:mrow></mml:math>-Si:H based on local network structures
resolves10.1103/physrevb.83.165314
Band lineup in amorphous/crystalline silicon heterojunctions and the impact of hydrogen microstructure and topological disorder
resolves10.1103/physrevb.62.16808
Hydrogen elimination model of the formation of hydrogen bonding structures during the growth of hydrogenated amorphous silicon by plasma CVD
resolves10.1103/physrevb.45.13367
Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon
resolves10.1063/1.4861404
Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells
The 1 reference without a DOI — listed, not checked
no DOI — not checked2023061802012484300_c29
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