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Barrier-assisted ion beam synthesis of transfer-free graphene on an arbitrary substrate

31/31 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 31 checked references that resolve

resolves10.1038/2211044a0

Graphite Formation from Low Temperature Pyrolysis of Methane over some Transition Metal Surfaces

resolves10.1038/363605a0

Cobalt-catalysed growth of carbon nanotubes with single-atomic-layer walls

resolves10.1063/1.1708759

Pyrolytic Formation of Highly Crystalline Graphite Films

resolves10.1038/nature02278

Atomic-scale imaging of carbon nanofibre growth

resolves10.1038/nnano.2010.53

An extended defect in graphene as a metallic wire

resolves10.1103/PhysRevB.87.205428

Superlubricity through graphene multilayers between Ni(111) surfaces

resolves10.1063/1.2982585

Graphene segregated on Ni surfaces and transferred to insulators

resolves10.1063/1.3498815

Growth of large-area graphene films from metal-carbon melts

resolves10.1021/nl902515k

Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling

resolves10.1088/0957-4484/22/8/085601

Synthesis of few-layered graphene by ion implantation of carbon in nickel thin films

resolves10.1063/1.3507287

Graphene synthesis by ion implantation

resolves10.1023/A:1023604214245

Oxidation Behavior of a Single-Crystal Ni-Base Superalloy in Air. I: At 800 and 900°C

resolves10.1002/adfm.201500981

Synthesis of Layer‐Tunable Graphene: A Combined Kinetic Implantation and Thermal Ejection Approach

resolves10.1038/s41467-018-07555-6

Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

resolves10.1063/1.4804982

Direct graphene synthesis on SiO2/Si substrate by ion implantation

resolves10.1063/1.4926605

Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation

resolves10.1039/C6CS00915H

Raman spectroscopy of graphene-based materials and its applications in related devices

resolves10.1038/ncomms3096

Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene

resolves10.1002/adma.201501600

High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition

resolves10.1088/2053-1583/aae21f

Effect of nucleation density on the crystallinity of graphene grown from mobile hot-wire-assisted CVD

resolves10.1016/j.carbon.2019.04.078

Probing carrier concentration in gated single, bi- and tri-layer CVD graphene using Raman spectroscopy

resolves10.1126/science.1199183

Layer-by-Layer Removal of Graphene for Device Patterning

resolves10.1063/1.4879555

Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

resolves10.1002/adom.201800985

Ambipolar Graphene–Quantum Dot Phototransistors with CMOS Compatibility

resolves10.1002/smll.201400463

Graphene Field‐Effect Transistor and Its Application for Electronic Sensing

resolves10.1021/nn101950n

Hysteresis of Electronic Transport in Graphene Transistors

resolves10.1002/advs.201600003

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

resolves10.1021/acsnano.6b06066

Direct Chemical-Vapor-Deposition-Fabricated, Large-Scale Graphene Glass with High Carrier Mobility and Uniformity for Touch Panel Applications

resolves10.1088/2053-1583/aa6aa0

Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect

resolves10.1002/smll.201502336

High Detectivity Graphene‐Silicon Heterojunction Photodetector

resolves10.1021/nl104364c

Graphene-Silicon Schottky Diodes

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