Reference health

Modeling and analysis for thermal management in gallium oxide field-effect transistors

64/64 checkable references clean · checked 2026-07-25

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

6 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 64 checked references that resolve

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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

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A review of Ga2O3 materials, processing, and devices

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Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

resolves10.1109/LED.2018.2830184

Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

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$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

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Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

resolves10.1063/1.5058059

MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

resolves10.1063/1.4916078

Anisotropic thermal conductivity in single crystal β-gallium oxide

resolves10.1109/LED.2018.2887278

Raman Thermography of Peak Channel Temperature in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga2O3 MOSFETs

resolves10.1016/j.diamond.2009.08.017

Formation and characterization of 4-inch GaN-on-diamond substrates

resolves10.1063/1.4865583

Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

resolves10.1109/LED.2011.2181481

Low Thermal Resistances at GaN–SiC Interfaces for HEMT Technology

resolves10.1021/acsami.9b10106

High Thermal Boundary Conductance across Bonded Heterogeneous GaN–SiC Interfaces

resolves10.1021/acsami.9b13869

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

resolves10.1109/TED.2006.883944

Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design

resolves10.1109/TED.2006.882399

Three-dimensional thermal analysis of a flip-chip mounted AlGaN/GaN HFET using confocal micro-Raman spectroscopy

resolves10.1063/1.4995407

Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

resolves10.1021/acsami.8b07014

Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices

resolves10.1016/j.applthermaleng.2018.05.072

Thermal management of GaN HEMT devices using serpentine minichannel heat sinks

resolves10.1063/1.5062841

Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

resolves10.1109/JEDS.2019.2933369

High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

resolves10.1109/TCPMT.2019.2923356

Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors

resolves10.1063/1.5038105

Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors

resolves10.1109/LED.2017.2696986

First Demonstration of Ga2O3Trench MOS-Type Schottky Barrier Diodes

resolves10.1063/1.5025704

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

resolves10.1109/LED.2019.2930189

Lateral 1.8 kV $\beta$ -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit

resolves10.1109/LED.2017.2697359

Ge-Doped ${\beta }$ -Ga2O3 MOSFETs

resolves10.1063/1.4986478

Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

resolves10.1063/1.4927742

Lattice thermal conductivity in β-Ga2O3 from first principles

resolves10.1109/LED.2005.860385

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

resolves10.1109/LED.2011.2119462

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

resolves10.1109/PAWR.2016.7440153

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

resolves10.1063/1.5040100

Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers

resolves10.1016/j.mtphys.2017.12.005

Anisotropic thermal conductivity of 4H and 6H silicon carbide measured using time-domain thermoreflectance

resolves10.1063/1.5097172

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

resolves10.1103/PhysRevB.67.054302

Thermal conductance of epitaxial interfaces

resolves10.1088/0953-8984/3/11/006

The role of interface disorder in the thermal boundary conductivity between two crystals

resolves10.1038/nmat3303

Effects of chemical bonding on heat transport across interfaces

resolves10.1063/1.4927273

Thermal transport across carbon nanotube-graphene covalent and van der Waals junctions

resolves10.1103/PhysRevB.84.125408

Influence of anisotropy on thermal boundary conductance at solid interfaces

resolves10.1016/j.diamond.2013.06.017

Effect of diamond surface orientation on the thermal boundary conductance between diamond and aluminum

resolves10.1002/adma.201901021

Anisotropic Thermal Boundary Resistance across 2D Black Phosphorus: Experiment and Atomistic Modeling of Interfacial Energy Transport

resolves10.1103/PhysRevB.58.R10199

Electronic Kapitza conductance due to inelastic electron-boundary scattering

resolves10.1103/PhysRevB.93.064302

Metal/dielectric thermal interfacial transport considering cross-interface electron-phonon coupling: Theory, two-temperature molecular dynamics, and thermal circuit

resolves10.1063/1.4930104

Thermal transport through GaN–SiC interfaces from 300 to 600 K

resolves10.1021/acsami.7b08961

Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling

resolves10.1063/1.5089559

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

resolves10.1063/1.5125637

Integration of polycrystalline Ga2O3 on diamond for thermal management

resolves10.1007/BF00820108

Thermal conductivity of alloys of the systems Sn-Pb and Sn-In in the solid and liquid states

resolves10.1109/6040.982845

Effect of temperature cycling on joint strength of PbSn and AuSn solders in laser packages

resolves10.1021/acsami.5b01341

Bimodal Sintered Silver Nanoparticle Paste with Ultrahigh Thermal Conductivity and Shear Strength for High Temperature Thermal Interface Material Applications

resolves10.1016/j.ijheatmasstransfer.2012.09.053

A unit cell approach to compute thermal conductivity of uncured silicone/phosphor composites

resolves10.1021/acsami.5b03007

Thermal Conductivity of Polymer-Based Composites with Magnetic Aligned Hexagonal Boron Nitride Platelets

resolves10.1109/JPROC.2006.879796

Thermal Interface Materials: Historical Perspective, Status, and Future Directions

resolves10.1016/j.ijheatmasstransfer.2015.11.045

Thermal conductivity enhancement of platelets aligned composites with volume fraction from 10% to 20%

resolves10.1016/j.compositesa.2017.03.012

Enhanced through-plane thermal conductivity of boron nitride/epoxy composites

resolves10.1021/acsami.6b08404

Facile Exfoliation and Noncovalent Superacid Functionalization of Boron Nitride Nanosheets and Their Use for Highly Thermally Conductive and Electrically Insulating Polymer Nanocomposites

resolves10.1002/app.25000

High thermal conductivity epoxy molding compound filled with a combustion synthesized AlN powder

resolves10.1016/j.applthermaleng.2016.03.056

Cooling of server electronics: A design review of existing technology

resolves10.1109/LED.2011.2171031

Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films

resolves10.1109/TED.2010.2044675

AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading

resolves10.1038/s42005-019-0145-5

Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration

resolves10.1063/1.5099961

Nanosecond transient thermoreflectance method for characterizing anisotropic thermal conductivity

resolves10.1109/TPEL.2013.2284248

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

The 6 references without a DOI — listed, not checked

no DOI — not checkedZ. Cheng, M. Fengwen, L. Yates, T. Suga, and S. Graham, arXiv:1909.01556 (2019).

no DOI — not checked2023062519281033000_c21

no DOI — not checked2023062519281033000_c35

no DOI — not checkedZhe Cheng, Yee Rui Koh, Abdullah Mamun, Jingjing Shi, Tingyu Bai, Kenny Huynh, Luke Yates, Zeyu Liu, Ruiyang Li, Eungkyu Lee, Michael Liao, Yekan Wang, Hsuan Ming Yu, Maki Kushimoto, Tengfei Luo, Mark S. Goorsky, Patrick E. Hopkins, Hiroshi Amano, Asif Khan, and S. Graham, arXiv:1911.01595 (2019).

no DOI — not checked2023062519281033000_c54

no DOI — not checked2023062519281033000_c56

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