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The piezoresistive mobility modeling for cubic and hexagonal silicon carbide crystals

https://doi.org/10.1063/5.0006830
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16/16 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 16 checked references that resolve
resolves10.1063/1.2960335
Piezoresistance in p-type silicon revisited
resolves10.1109/IEDM.2005.1609286
Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime
resolves10.1109/JPROC.2009.2013612
Review: Semiconductor Piezoresistance for Microsystems
resolves10.1109/TPEL.2013.2268900
A Survey of Wide Bandgap Power Semiconductor Devices
resolves10.1109/TIE.2017.2652401
Review of Silicon Carbide Power Devices and Their Applications
resolves10.1088/0022-3727/40/20/S17
SiC sensors: a review
resolves10.1109/JMEMS.2015.2470132
The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review
resolves10.1063/1.5037545
Isotropic piezoresistance of p-type 4H-SiC in (0001) plane
resolves10.1109/16.285013
Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements
resolves10.1063/1.353169
Nonlinear piezoresistance effects in silicon
resolves10.1063/1.1728280
Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects
resolves10.1109/JMEMS.2009.2039697
What is the Young's Modulus of Silicon?
resolves10.1109/LED.2017.2700402
Experimental Investigation of Piezoresistive Effect in p-Type 4H–SiC
resolves10.1088/0960-1317/22/8/085034
Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors
resolves10.1063/1.4869151
Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC
resolves10.1007/s40094-015-0183-7
Elastic and thermodynamical properties of cubic (3C) silicon carbide under high pressure and high temperature
The 3 references without a DOI — listed, not checked
no DOI — not checkedPiezoresistor Design and Applications
no DOI — not checked2023080902071949200_c13
no DOI — not checked2023080902071949200_c19
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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