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Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 46 checked references that resolve
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Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
resolves10.1143/JJAP.42.L1
Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
resolves10.1149/2.010308jss
Gallium Nitride Crystals Grown by Hydride Vapor Phase Epitaxy with Dislocation Reduction Mechanism
resolves10.7567/JJAP.57.065502
Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control
resolves10.1143/APEX.3.075501
Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method
resolves10.1021/cg2000443
Control of Growth Facets and Dislocation Propagation Behavior in the Na-Flux Growth of GaN
resolves10.1143/APEX.5.095501
Coalescence Growth of Dislocation-Free GaN Crystals by the Na-Flux Method
resolves10.7567/APEX.7.035503
Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique
resolves10.7567/1882-0786/ab0db6
Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method
resolves10.1038/nmat1955
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
resolves10.1021/acs.cgd.7b00388
Homoepitaxial Hydride Vapor Phase Epitaxy Growth on GaN Wafers Manufactured by the Na-Flux Method
resolves10.1143/JJAP.37.L398
Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
resolves10.1063/1.5024704
Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
resolves10.1039/D0CE01344G
Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy
resolves10.7567/1347-4065/ab1392
Correlation between current leakage and structural properties of threading dislocations in GaN bulk single crystals grown using a Na-flux method
resolves10.1063/1.5011345
Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy
resolves10.1016/j.jcrysgro.2017.01.017
Characterization of threading dislocations in GaN (0001) substrates by photoluminescence imaging, cathodoluminescence mapping and etch pits
resolves10.1063/1.4983254
Direct observation of inclined <i>a</i>-type threading dislocation with <i>a</i>-type screw dislocation in GaN
resolves10.1063/1.2420790
Lateral migration of dislocations in oxygen-doped GaN grown by molecular beam epitaxy
resolves10.1063/1.1595133
Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films
resolves10.1063/1.1897486
Role of inclined threading dislocations in stress relaxation in mismatched layers
resolves10.1063/1.5111664
Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN
resolves10.1038/s41598-017-08905-y
The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
resolves10.1063/1.1613360
Stress relaxation in mismatched layers due to threading dislocation inclination
resolves10.7567/APEX.11.031004
Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
resolves10.1002/pssb.201900527
Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer
resolves10.1016/j.jcrysgro.2020.125643
Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
resolves10.1093/oxfordjournals.jmicro.a050898
Identification of Lattice Defects by Convergent-Beam Electron Diffraction
resolves10.7567/1347-4065/ab0acf
Nondestructive visualization of threading dislocations in GaN by micro raman mapping
resolves10.1002/crat.202000042
High‐Quality GaN Crystal Growth Using Flux‐Film‐Coated LPE with Na Flux
resolves10.1016/j.jcrysgro.2009.01.125
Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction
resolves10.35848/1882-0786/aba58e
Anomalous dislocation annihilation behavior observed in a GaN crystal grown on point seeds by the Na-flux method
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