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GaN-based power devices: Physics, reliability, and perspectives

610/610 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

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The 610 checked references that resolve

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GaN-on-Si Power Technology: Devices and Applications

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99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors

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Efficiency characterization and thermal study of GaN based 1 kW inverter

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Evaluation and comparison of silicon and gallium nitride power transistors in LLC resonant converter

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Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter

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600 V normally-off p-gate GaN HEMT based 3-level inverter

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A 1-MHz GaN Converter with 4X Voltage Range

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Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC–DC Multiphase Buck Converter

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75 MHz discrete GaN based multi-level buck converter for envelope tracking applications

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GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

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Monolithically Integrated E-mode GaN-on-SOI Gate Driver with Power GaN-HEMT for MHz-Switching

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A review of gallium nitride power device and its applications in motor drive

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High temperature performance of AlGaN/GaN HEMTs on Si substrates

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High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates

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Testing the Temperature Limits of GaN-Based HEMT Devices

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1.6kV, 2.9 m&#x2126; cm2 normally-off p-GaN HEMT device

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GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

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Comparison of the properties of GaN grown on complex Si-based structures

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Analysis of the growth of GaN epitaxy on silicon

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Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1−xN Layers

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Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides

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An assessment of wide bandgap semiconductors for power devices

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Static and dynamic characteristics of L g 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications

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Springer Handbook of Electronic and Photonic Materials

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Optical properties and electronic structure of InN and In-rich group III-nitride alloys

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Ab initiostudy of the spontaneous polarization of pyroelectric BeO

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Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

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Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions

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Unintentional doping in GaN

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Electron beam effects on blue luminescence of zinc-doped GaN

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Epitaxial growth of III-nitride electronic devices

resolves10.1016/j.sse.2012.05.054

A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices

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An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling

resolves10.1109/T-ED.1982.20813

Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET

resolves10.1109/ISPSD.2014.6855976

Characterization and application of 600 V normally-off GaN transistors in hard switching DC/DC converters

resolves10.1088/1674-1056/24/6/067301

Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

resolves10.1063/1.5114866

V-shaped dislocations in a GaN epitaxial layer on GaN substrate

resolves10.1088/1742-6596/209/1/012017

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNxand AlGaN layers

resolves10.1063/1.4897338

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

resolves10.1016/S0927-796X(02)00008-6

Substrates for gallium nitride epitaxy

resolves10.1063/1.1597749

Atomic arrangement at the AlN/Si (111) interface

resolves10.3390/ma13194271

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

resolves10.7567/SSDM.2011.AL-7-3

AlGaN/GaN HFET grown on 6-inch diameter Si(111) substrates by MOCVD

resolves10.1016/j.msec.2005.09.002

The control of two-dimensional-electron-gas density and mobility in AlGaN/GaN heterostructures with Schottky gate

resolves10.1109/APEC.2013.6520464

Evaluation and application of 600V GaN HEMT in cascode structure

resolves10.1109/TPEL.2013.2267804

Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration

resolves10.1109/IECON.2013.6699239

GaN HEMT devices: Experimental results on normally-on, normally-off and cascode configuration

resolves10.1109/IEDM.2011.6131585

Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology

resolves10.1109/LED.2015.2483760

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

resolves10.1109/JEDS.2018.2859769

Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation

resolves10.1109/TED.2005.862708

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

resolves10.1002/pssc.200983644

Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique

resolves10.1109/LED.2008.2000607

AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

resolves10.1109/ISPSD.2011.5890835

Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

resolves10.3390/en10020153

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

resolves10.1116/1.4967306

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

resolves10.1186/1556-276X-6-132

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

resolves10.1109/LED.2005.851122

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

resolves10.1109/TED.2006.881054

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

resolves10.3390/nano10112116

Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors

resolves10.1109/ESSDERC.2013.6818819

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors

resolves10.1016/j.mssp.2017.09.027

Review of technology for normally-off HEMTs with p-GaN gate

resolves10.1002/pssc.200880838

Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

resolves10.1002/pssa.201000631

Enhancement‐mode AlGaN/GaN HEMT and MIS‐HEMT technology

resolves10.1063/1.4815923

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

resolves10.3390/electronics5020014

Gate Stability of GaN-Based HEMTs with P-Type Gate

resolves10.1143/JJAP.46.115

Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

resolves10.1063/1.4737583

Band offset measurements of the GaN/dielectric interfaces

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The work function of the elements and its periodicity

resolves10.1002/aelm.201500113

Ohmic Contacts on p‐GaN

resolves10.1109/TED.2007.908601

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

resolves10.1109/LED.2015.2465137

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

resolves10.1109/VLSIT.2012.6242496

A 22nm high performance and low-power CMOS technology featuring fully-depleted tri-gate transistors, self-aligned contacts and high density MIM capacitors

resolves10.1143/APEX.1.023001

Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

resolves10.1143/JJAP.48.081002

Drain Current Stability and Controllability of Threshold Voltage and Subthreshold Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor

resolves10.1109/LED.2017.2661755

High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

resolves10.1109/LED.2017.2731799

Slanted Tri-Gates for High-Voltage GaN Power Devices

resolves10.1109/TED.2013.2278185

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

resolves10.1109/TED.2019.2925859

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

resolves10.1063/1.3544048

Top-down fabrication of AlGaN/GaN nanoribbons

resolves10.1103/PhysRevB.81.153306

Elastic strain relaxation in GaN/AlN nanowire superlattice

resolves10.1109/TED.2013.2274660

High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

resolves10.1109/WiPDA.2016.7799960

Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model

resolves10.1186/s11671-017-2189-3

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

resolves10.1109/LED.2019.2896359

High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

resolves10.1109/LED.2011.2179971

Tri-Gate Normally-Off GaN Power MISFET

resolves10.1109/LED.2019.2922204

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

resolves10.1109/LED.2020.3037026

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

resolves10.1063/5.0025351

Tri-gate GaN junction HEMT

resolves10.1109/ISPSD.2018.8393646

Monolithic integration of GaN-based NMOS digital logic gate circuits with E-mode power GaN MOSHEMTs

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High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

resolves10.1109/LED.2017.2725908

Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

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High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

resolves10.1109/LED.2019.2916253

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

resolves10.1109/ISPSD46842.2020.9170081

Enhancement-Mode GaN p-Channel MOSFETs for Power Integration

resolves10.1109/LED.2020.2987003

Regrowth-Free GaN-Based Complementary Logic on a Si Substrate

resolves10.1109/IRPS.2019.8720479

A New Approach to Validate GaN FET Reliability to Power-Line Surges Under Use-Conditions

resolves10.1063/1.3567927

Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation

resolves10.1016/j.jcrysgro.2006.10.192

C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

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High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance

resolves10.1109/ESSDER.2006.307693

Effects of an Fe-doped GaN Buffer in AlGaN/GaN Power HEMTs on Si Substrate

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Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

resolves10.1109/JEDS.2018.2872975

High Figure-of-Merit (${V}_{\text{BR}}^{\text{2}}$ /${R}_{\text{ON}}$ ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier

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Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

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Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

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Vertical breakdown of GaN on Si due to V-pits

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Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

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Analytical Field Plate Model for Field Effect Transistors

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Field-Plate Engineering for HFETs

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Slant Field Plate Model for Field-Effect Transistors

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Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

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Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

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Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate length

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1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

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2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

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Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

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High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

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Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

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Ultra-compact, High-Frequency Power Integrated Circuits Based on GaN-on-Si Schottky Barrier Diodes

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Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

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Novel Asymmetric Slant Field Plate Technology for High-Speed Low-Dynamic Ron E/D-mode GaN HEMTs

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The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

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Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

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Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

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Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

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GaN‐on‐silicon high electron mobility transistors with blocking voltage of 3 kV

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The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

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The thermal effects of substrate removal on GaN HEMTs using Raman Thermometry

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Al-rich AlGaN based transistors

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Ultra-Wide Bandgap AlxGa1-xN Channel Transistors

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Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

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AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts

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Ohmic contacts to Al‐rich AlGaN heterostructures

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Low-Resistive Ohmic Contacts for AlGaN Channel High-Electron-Mobility Transistors Using Zr/Al/Mo/Au Metal Stack

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

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AlGaN channel field effect transistors with graded heterostructure ohmic contacts

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Multi-channel nanowire devices for efficient power conversion

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High conductivity modulation doped AlGaN/GaN multiple channel heterostructures

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Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

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650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

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The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching

resolves10.1109/MWSYM.2019.8700845

GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers

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The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

resolves10.1109/LED.2020.2967458

Multi-Channel AlGaN/GaN In-Plane-Gate Field-Effect Transistors

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Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

resolves10.1109/LED.2018.2887199

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

resolves10.1109/IEDM19573.2019.8993536

1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

resolves10.1109/LED.2020.3005934

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

resolves10.1109/LED.2020.3038808

Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

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Low cost high voltage GaN polarization superjunction field effect transistors

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Theory of Semiconductor Superjunction Devices

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Superjunction Power Devices, History, Development, and Future Prospects

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Performance limits of vertical GaN of conventional doped pn and natural polarization superjunction devices

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A unified model for vertical doped and polarized superjunction GaN devices

resolves10.1109/TED.2013.2266544

Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

resolves10.1109/LED.2008.2002753

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

resolves10.1109/IEDM.2008.4796636

GaN-based natural super junction diodes with multi-channel structures

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GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

resolves10.1109/ISPSD.2015.7123442

Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study

resolves10.1109/TED.2019.2953843

Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode

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Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching

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N-polar GaN epitaxy and high electron mobility transistors

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N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

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N-polar GaN∕AlGaN∕GaN high electron mobility transistors

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Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

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N‐polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs

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Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures

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A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor

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GaN HEMT reliability

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Reliability of GaN HEMTs: current status and future technology

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Reliability of GaN-HEMTs for high-voltage switching applications

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Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

resolves10.1109/ECCE.2013.6647171

Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter

resolves10.1109/TPEL.2013.2276127

Evaluation and Application of 600 V GaN HEMT in Cascode Structure

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Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT

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Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

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Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p–n Junction Epitaxial Layers

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High Voltage Vertical GaN p-n Diodes With Avalanche Capability

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GaN Vertical p–i–n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation

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Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination

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Preparation and properties of free-standing HVPE grown GaN substrates

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Preparation of GaN Single Crystals Using a Na Flux

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Morphology and characterization of GaN single crystals grown in a Na flux

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Bulk ammonothermal GaN

resolves10.1016/j.jcrysgro.2008.06.036

Excellent crystallinity of truly bulk ammonothermal GaN

resolves10.7567/JJAP.57.04FG09

5.0 kV breakdown-voltage vertical GaN p–n junction diodes

resolves10.1109/LED.2015.2478907

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

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Gallium nitride vertical power devices on foreign substrates: a review and outlook

resolves10.3390/electronics9091342

GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices

resolves10.1063/1.1978991

Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers

resolves10.1088/0268-1242/31/10/105016

Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures

resolves10.1016/j.microrel.2015.07.012

Reliability studies of vertical GaN devices based on bulk GaN substrates

resolves10.1109/TED.2014.2360861

Vertical Power p-n Diodes Based on Bulk GaN

resolves10.1109/LED.2011.2167125

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

resolves10.1016/S0038-1101(99)00183-5

Temperature dependence of GaN high breakdown voltage diode rectifiers

resolves10.1016/S0038-1101(00)00059-9

Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers

resolves10.1063/1.2001738

Growth and characterization of GaN PiN rectifiers on free-standing GaN

resolves10.1002/pssa.201000976

Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substrates

resolves10.1109/LED.2013.2294175

3.7 kV Vertical GaN PN Diodes

resolves10.7567/JJAP.52.028007

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

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Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

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Characterization of AlGaN∕GaNp-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors

resolves10.1109/ISPSD.2013.6694455

Vertical power diodes in bulk GaN

resolves10.1109/WiPDA.2016.7799924

Switching characterization of vertical GaN PiN diodes

resolves10.1109/LED.2014.2319214

400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

resolves10.1063/1.4937436

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

resolves10.1109/IEDM.2015.7409665

GaN-on-GaN p-n power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2

resolves10.1109/LED.2017.2720747

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

resolves10.1063/1.4936891

High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

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Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

resolves10.1109/LED.2018.2837625

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

resolves10.1109/LED.2017.2690974

Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes

resolves10.1109/LED.2019.2941830

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics

resolves10.1109/LED.2018.2868560

High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates

resolves10.1063/1.5035267

High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination

resolves10.1109/TED.2015.2502186

Vertical GaN Power Diodes With a Bilayer Edge Termination

resolves10.1109/16.830981

High voltage GaN Schottky rectifiers

resolves10.1063/1.125933

Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes

resolves10.1143/APEX.3.081001

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

resolves10.1109/ISPSD.2014.6856038

Fast recovery performance of vertical GaN Schottky barrier diodes on low-dislocation-density GaN substrates

resolves10.7567/APEX.8.071001

50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V

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Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier

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High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

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Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

resolves10.7567/JJAP.57.105501

Comparing high-purity c - and m -plane GaN layers for Schottky barrier diodes grown homoepitaxially by metalorganic vapor phase epitaxy

resolves10.1063/1.5087491

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

resolves10.7567/1347-4065/ab65cd

Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer

resolves10.1063/1.4993201

Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers

resolves10.1109/LED.2018.2808684

High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination

resolves10.1109/TPEL.2018.2876444

Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

resolves10.1109/LED.2019.2915578

Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop

resolves10.1088/1674-1056/ab7909

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination*

resolves10.1109/TED.2017.2662702

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

resolves10.1109/LED.2017.2720689

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

resolves10.7567/APEX.10.061003

Vertical GaN merged PiN Schottky diode with a breakdown voltage of 2 kV

resolves10.1149/2.0041701jss

Vertical GaN Junction Barrier Schottky Diodes

resolves10.1109/IEDM.2016.7838386

Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings

resolves10.1109/LED.2008.922982

Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer

resolves10.1109/IEDM.2016.7838385

1.7 kV/1.0 mΩcm2normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure

resolves10.1063/1.1641520

AlGaN/GaN current aperture vertical electron transistors with regrown channels

resolves10.1109/JSSC.1975.1050618

An experimental and theoretical analysis of double-diffused MOS transistors

resolves10.1109/LED.2011.2173456

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

resolves10.1109/LED.2014.2339197

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">$\Omega $ </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">$^{2}$ </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

resolves10.1109/TED.2016.2632150

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

resolves10.1109/LED.2018.2828844

880 V/$2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates

resolves10.7567/APEX.8.054101

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

resolves10.1109/ISPSD.2016.7520877

Over 10 a operation with switching characteristics of 1.2 kV-class vertical GaN trench MOSFETs on a bulk GaN substrate

resolves10.1143/JJAP.46.L599

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility

resolves10.1143/APEX.1.011105

Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

resolves10.1143/APEX.1.021104

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

resolves10.7567/APEX.7.021002

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

resolves10.1109/ISPSD.2019.8757621

100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer

resolves10.1016/j.microrel.2020.113828

Exploration of gate trench module for vertical GaN devices

resolves10.1109/LED.2017.2649599

In Situ <italic>O</italic>xide, <italic>G</italic>aN Interlayer-Based Vertical Trench MOS<italic>FET</italic> (<italic>OG-FET</italic>) on Bulk GaN substrates

resolves10.1109/IEDM.2017.8268359

Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices

resolves10.1109/LED.2016.2616508

OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET

resolves10.1109/TED.2018.2829125

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel

resolves10.1109/DRC.2017.7999414

600 V GaN vertical V-trench MOSFET with MBE regrown channel

resolves10.1109/IEDM.2017.8268357

1200 V GaN vertical fin power field-effect transistors

resolves10.1109/LED.2017.2670925

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

resolves10.1109/TED.2017.2716982

Instability of Dynamic- $R_{\text ON}$ and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors

resolves10.1109/LED.2018.2880306

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

resolves10.1038/s41598-019-46186-9

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

resolves10.1088/1361-6641/abc5ff

Vertical 3D gallium nitride field-effect transistors based on fin structures with inverted p-doped channel

resolves10.1063/5.0027922

Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator

resolves10.1109/LED.2014.2314637

GaN-on-Si Vertical Schottky and p-n Diodes

resolves10.1109/TED.2015.2426711

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

resolves10.1088/1361-6463/aaaf9d

The 2018 GaN power electronics roadmap

resolves10.1109/EuroSimE48426.2020.9152656

Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates

resolves10.1016/j.microrel.2021.114061

Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates

resolves10.1109/LED.2016.2548488

Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers

resolves10.1109/LED.2016.2646669

High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

resolves10.7567/APEX.9.111005

Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition

resolves10.1109/LED.2018.2819642

720-V/0.35-m<inline-formula> <tex-math notation="LaTeX">$\Omega \cdot$ </tex-math> </inline-formula>cm2Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers

resolves10.1109/LED.2018.2793669

820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2

resolves10.1109/LED.2017.2779445

GaN-on-Si Quasi-Vertical Power MOSFETs

resolves10.1109/LED.2019.2894177

Fully Vertical GaN-on-Si power MOSFETs

resolves10.1109/IEDM.2008.4796635

Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters

resolves10.1002/pssc.201000914

GaN HEMT and MOS monolithic integration on silicon substrates

resolves10.1109/TED.2016.2597244

W-Band MMIC PA With Ultrahigh Power Density in 100-nm AlGaN/GaN Technology

resolves10.1109/LED.2017.2761911

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

resolves10.1109/LED.2018.2841959

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

resolves10.3390/ma13214740

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

resolves10.35848/1882-0786/ab6ddd

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

resolves10.1109/TIE.2017.2652401

Review of Silicon Carbide Power Devices and Their Applications

resolves10.1149/2.0371602jss

Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

resolves10.1063/1.5116866

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

resolves10.1063/1.3285309

High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

resolves10.1063/1.114330

Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition

resolves10.1063/1.117202

Local vibrational modes of the Mg–H acceptor complex in GaN

resolves10.1143/JJAP.31.1258

Hole Compensation Mechanism of P-Type GaN Films

resolves10.1143/JJAP.31.L139

Thermal Annealing Effects on P-Type Mg-Doped GaN Films

resolves10.1016/j.apsusc.2006.10.026

Activation of Mg-doped P-GaN by using two-step annealing

resolves10.7567/APEX.9.121001

Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels

resolves10.1146/annurev.ms.07.080177.002013

Deep Level Impurities in Semiconductors

resolves10.1063/1.5011327

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

resolves10.1109/16.906451

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

resolves10.1109/55.902832

Current instabilities in GaN-based devices

resolves10.1109/16.906437

Trapping effects and microwave power performance in AlGaN/GaN HEMTs

resolves10.1109/TED.2006.885681

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

resolves10.1109/TDMR.2008.922017

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

resolves10.1109/TED.2007.901150

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

resolves10.1109/TED.2013.2274477

Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors

resolves10.1109/LED.2014.2344439

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

resolves10.1109/TED.2014.2386391

Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

resolves10.7567/JJAP.50.08KE04

Enhancement in Electron Field Emission of Microcrystalline Diamond Films upon Iron Coating and Annealing Processes

resolves10.1109/IEDM.2012.6479033

Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

resolves10.1063/1.4811754

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

resolves10.1109/LED.2013.2272095

Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs

resolves10.1109/TED.2013.2274730

Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics

resolves10.1109/LED.2016.2530693

Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs

resolves10.1109/TED.2017.2686840

Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

resolves10.1109/LED.2008.2010067

Anomalous Kink Effect in GaN High Electron Mobility Transistors

resolves10.1109/LED.2011.2105460

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

resolves10.1016/j.mseb.2004.09.001

Field dependent transformation of electron traps in GaN p–n diodes grown by metal–organic chemical vapour deposition

resolves10.1109/SIM.2000.939193

Deep centers in as-grown and electron-irradiated n-GaN

resolves10.1016/j.jcrysgro.2005.03.035

Identification of donors, acceptors, and traps in bulk-like HVPE GaN

resolves10.3390/electronics4041090

Analysis of Deep Level Defects in GaN p-i-n Diodes after Beta Particle Irradiation

resolves10.1038/s41598-019-43583-y

First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy

resolves10.1002/pssa.201700516

Evolution of Electrically Active Defects in n‐GaN During Heat Treatment Typical for Ohmic Contact Formation

resolves10.1116/1.4953347

Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates

resolves10.1063/1.4905783

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

resolves10.7567/JJAP.51.04DF04

Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

resolves10.1149/07504.0039ecst

(Invited) DLTS Studies of Defects in n-GaN

resolves10.1063/1.1586981

Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN

resolves10.1016/S0022-0248(00)00982-9

Electron traps and growth rate of buffer layers in unintentionally doped GaN

resolves10.1063/1.3122290

Deep defects in GaN/AlGaN/SiC heterostructures

resolves10.1007/s11664-007-0313-3

Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition

resolves10.1109/ASDAM.2010.5666319

Investigation of deep energy levels in heterostructures based on GaN by DLTS

resolves10.1063/1.357144

Analysis of deep levels in n-type GaN by transient capacitance methods

resolves10.1063/1.125622

Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy

resolves10.1063/1.4748170

As-grown deep-level defects in n-GaN grown by metal–organic chemical vapor deposition on freestanding GaN

resolves10.1116/1.5017867

Deep-level defects in homoepitaxial p-type GaN

resolves10.1063/1.1483390

60Co gamma-irradiation-induced defects in n-GaN

resolves10.1088/0953-8984/16/34/027

Identification of deep levels in GaN associated with dislocations

resolves10.1063/1.3491798

Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect

resolves10.1557/PROC-692-H2.7.1

Deep Centers and Their Capture Barriers in MOCVD-Grown GaN

resolves10.1063/1.121274

Deep centers in n-GaN grown by reactive molecular beam epitaxy

resolves10.1063/1.1557316

Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy

resolves10.1002/pssc.200778622

Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films

resolves10.1088/0022-3727/41/15/155314

Deep level characteristics in n-GaN with inductively coupled plasma damage

resolves10.1063/1.3453660

Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy

resolves10.1103/PhysRevB.69.125210

Dissociation of H-related defect complexes in Mg-doped GaN

resolves10.1088/0022-3727/44/34/345101

Comparison of as-grown and annealed GaN/InGaN : Mg samples

resolves10.1063/1.3094754

Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys

resolves10.1002/pssb.201600364

Deep level traps in semi‐polar n‐GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy

resolves10.1063/1.1445274

Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

resolves10.1063/1.1697616

Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures

resolves10.1103/PhysRevB.55.4689

Yellow luminescence and related deep states in undoped GaN

resolves10.1063/1.3682528

Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy

resolves10.1063/1.1290042

Hydrogen passivation of deep levels in n–GaN

resolves10.1063/1.3687700

Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition

resolves10.1364/OE.20.00A812

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes

resolves10.1063/1.2126145

Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy

resolves10.1063/1.5022806

Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride

resolves10.1063/1.1578167

Deep level defect in Si-implanted GaN n+-p junction

resolves10.1109/LED.2012.2188710

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

resolves10.7567/1347-4065/ab0408

Characterization of hole traps in MOVPE-grown p-type GaN layers using low-frequency capacitance deep-level transient spectroscopy

resolves10.1016/j.mseb.2009.11.030

Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire

resolves10.1063/1.121016

Deep level defects in n-type GaN grown by molecular beam epitaxy

resolves10.1063/1.115028

Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

resolves10.1109/IRPS.2012.6241883

Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

resolves10.1063/1.4806980

Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors

resolves10.1063/1.4793196

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

resolves10.1007/s11664-007-0202-9

Electron and Hole Capture Cross-Sections of Fe Acceptors in GaN:Fe Epitaxially Grown on Sapphire

resolves10.1103/PhysRevB.55.4382

Excited states of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">Fe</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>in GaN

resolves10.1109/IRPS.2012.6241780

Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs

resolves10.1063/1.4759037

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

resolves10.1063/1.4983556

Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges

resolves10.1063/1.5057373

The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

resolves10.1063/1.4927405

Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors

resolves10.1063/1.115805

Activation energies of Si donors in GaN

resolves10.1016/j.materresbull.2012.03.016

Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE

resolves10.1063/1.1863458

Electrical activation characteristics of silicon-implanted GaN

resolves10.1063/1.112309

p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

resolves10.1143/JJAP.35.L282

Electrical Transport Properties of p-GaN

resolves10.35848/1882-0786/ab9e7c

Identification of origin of E C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy

resolves10.1109/INMMiC46721.2020.9160114

Impact of the Location of Iron Buffer Doping on Trap Signatures in GaN HEMTs

resolves10.1103/PhysRevB.89.035204

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

resolves10.1109/TMTT.2002.807687

Transient characteristics of gan-based heterostructure field-effect transistors

resolves10.1109/LED.2005.860383

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

resolves10.1109/TPEL.2013.2271977

Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications

resolves10.1109/LED.2004.827283

Analysis of Surface Charging Effects in Passivated AlGaN–GaN FETs Using a MOS Test Electrode

resolves10.1088/0268-1242/28/7/074021

Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements

resolves10.1109/55.843146

The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

resolves10.1109/IEDM.2001.979574

Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion

resolves10.1109/55.863096

High breakdown GaN HEMT with overlapping gate structure

resolves10.1049/el:20040017

12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate

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Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons

resolves10.1016/j.microrel.2012.08.023

Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs

resolves10.1109/LED.2013.2286173

Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs

resolves10.1109/TED.2017.2728785

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

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Distribution of donor states on etched surface of AlGaN/GaN heterostructures

resolves10.1063/1.4971409

On the origin of interface states at oxide/III-nitride heterojunction interfaces

resolves10.1109/TED.2019.2901869

Measurement of the Variable Surface Charge Concentration in Gallium Nitride and Implications on Device Modeling and Physics

resolves10.1063/1.4896900

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

resolves10.1016/j.microrel.2010.07.020

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

resolves10.1109/TED.2019.2928536

Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization

resolves10.1109/TED.2005.862702

Punch-through in short-channel AlGaN/GaN HFETs

resolves10.1109/TED.2010.2069566

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

resolves10.1109/TED.2012.2216535

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

resolves10.1109/LED.2012.2200874

Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices

resolves10.1109/LED.2014.2356720

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed $I-V$ Measurement

resolves10.1109/IRPS.2016.7574526

Negative-bias temperature instability of GaN MOSFETs

resolves10.1109/IEDM.2013.6724572

Total current collapse in high-voltage GaN MIS-HEMTs induced by Zener trapping

resolves10.1109/TED.2017.2706090

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

resolves10.1109/IRPS45951.2020.9128816

Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs

resolves10.1063/1.1418452

Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

resolves10.1109/LED.2003.822667

30-W/mm GaN HEMTs by Field Plate Optimization

resolves10.1063/1.2179375

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

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Precursors for carbon doping of GaN in chemical vapor deposition

resolves10.1063/1.2005379

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

resolves10.1063/1.1498879

Substitutional and interstitial carbon in wurtzite GaN

resolves10.1063/1.3492841

Carbon impurities and the yellow luminescence in GaN

resolves10.1063/1.4983452

A first-principles study of carbon-related energy levels in GaN. I. Complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies

resolves10.1109/IRPS.2014.6861109

Threshold voltage instabilities in D-mode GaN HEMTs for power switching applications

resolves10.1109/TED.2016.2593791

Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers

resolves10.1109/TED.2018.2878770

Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

resolves10.1016/j.microrel.2019.06.066

Insights into the off-state breakdown mechanisms in power GaN HEMTs

resolves10.1002/pssa.201900762

The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates

resolves10.1007/s10825-020-01573-8

The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs

resolves10.1063/1.4968823

On reduction of current leakage in GaN by carbon-doping

resolves10.1109/IRPS.2016.7574529

Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs

resolves10.1109/TED.2018.2813542

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

resolves10.1109/TED.2018.2860902

“Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model

resolves10.1109/TED.2018.2872552

Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN

resolves10.1116/1.1752907

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

resolves10.35848/1882-0786/ab9623

Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements

resolves10.1109/TED.2018.2850042

Performance and V TH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiN x /PECVD-SiN x Gate Dielectric Stack

resolves10.7567/JJAP.54.044101

Investigation of the threshold voltage drift in enhancement mode GaN MOSFET under negative gate bias stress

resolves10.1016/j.microrel.2019.113488

Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias

resolves10.1109/TED.2021.3050127

Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT

resolves10.1049/el:20062113

RF knee walkout and source access region of unpassivated HFETs

resolves10.1109/EDSSC.2015.7285198

Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate

resolves10.1109/IRPS.2016.7574586

Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs

resolves10.7567/JJAP.52.04CF07

Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors

resolves10.1002/pssa.201431744

Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

resolves10.1088/0268-1242/31/9/093004

Reliability and parasitic issues in GaN-based power HEMTs: a review

resolves10.1109/TED.2020.3045683

“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs

resolves10.1109/IEDM.2017.8268492

Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation

resolves10.1109/IEDM.2015.7409831

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

resolves10.1016/j.microrel.2017.10.006

On the origin of dynamic Ron in commercial GaN-on-Si HEMTs

resolves10.1109/LED.2013.2297626

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

resolves10.1016/j.mssp.2017.10.009

Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

resolves10.1109/LED.2012.2188016

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

resolves10.1109/TED.2019.2931718

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

resolves10.1109/LED.2018.2791664

Dependence of ${V}_{\text {TH}}$ Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET

resolves10.1109/IEDM19573.2019.8993588

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT

resolves10.1109/TED.2018.2856998

Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FET

resolves10.1109/IEDM.2017.8268489

Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiN<inf>x</inf>/GaN MIS-FETs

resolves10.1109/IRPS.2015.7112770

Positive-bias temperature instability (PBTI) of GaN MOSFETs

resolves10.1109/TED.2016.2539341

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs

resolves10.1109/TED.2018.2828702

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs

resolves10.1016/j.microrel.2015.06.130

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

resolves10.1109/TED.2013.2279158

On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors

resolves10.1109/EuMIC.2014.6997798

On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs

resolves10.1109/TED.2013.2248158

Broadband Frequency Dispersion Small-Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs

resolves10.1088/1674-1056/23/2/027302

Kink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

resolves10.1109/LECHPD.2002.1146791

Impact ionization in high performance AlGaN/GaN HEMTs

resolves10.1109/TED.2018.2872513

Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

resolves10.1016/j.microrel.2014.07.085

Traps localization and analysis in GaN HEMTs

resolves10.1109/TED.2015.2499313

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

resolves10.1063/1.1708872

Determination of Deep Centers in Conducting Gallium Arsenide

resolves10.1016/0038-1101(70)90064-X

Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments

resolves10.1063/1.1663719

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

resolves10.1063/1.323120

Photocapacitance effects of deep traps in epitaxial GaAs

resolves10.1103/PhysRevB.23.5335

Deep-level optical spectroscopy in GaAs

resolves10.1063/1.126580

Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes

resolves10.1063/1.4933174

Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN

resolves10.1016/j.spmi.2003.12.002

Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

resolves10.1002/pssa.200303464

Drain current DLTS of AlGaN/GaN HEMTs

resolves10.1109/LED.2004.832788

Drain Current DLTS of AlGaN–GaN MIS-HEMTs

resolves10.1109/IEDM.2010.5703396

Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs

resolves10.1109/TED.2013.2279021

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

resolves10.1088/1361-6641/abc456

Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors

resolves10.1109/IRPS.2014.6861130

High-voltage double-pulsed measurement system for GaN-based power HEMTs

resolves10.1109/TED.2010.2087339

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

resolves10.1109/LED.2010.2047092

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

resolves10.1109/TED.2004.835025

Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs

resolves10.1109/IRPS.2012.6241881

Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs

resolves10.1109/TED.2013.2278290

Deep Levels Characterization in GaN HEMTs—Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy

resolves10.1063/1.1719264

Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors

resolves10.1016/j.mssp.2017.10.029

Evolution of on-resistance (RON) and threshold voltage (VTH) in GaN HEMTs during switch-mode operation

resolves10.1016/0038-1101(62)90111-9

An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes

resolves10.1109/T-ED.1966.15827

Surface states at steam-grown silicon-silicon dioxide interfaces

resolves10.12816/0048929

Capacitance–Frequency (C-V-F) and Conductance–Frequency (G-V-F) Characteristics of Au/N-Gan Freestanding Schottky Structure

resolves10.1002/j.1538-7305.1967.tb01727.x

The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

resolves10.1016/0038-1101(80)90064-7

A single-frequency approximation for interface-state density determination

resolves10.1063/1.4750481

Investigation of temperature dependent threshold voltage variation of Gd2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure

resolves10.1088/0256-307X/34/9/097301

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

resolves10.1088/0022-3735/22/7/017

The C-V, G-V and I-V techniques as a tool for the study of real semiconductor surfaces

resolves10.1109/ICMTS.2004.1309475

Leakage current correction in quasi-static C-V measurements

resolves10.1049/el:20010403

C-V and G-V characterisation of Ga 2 O 3 (Gd 2 O 3 )/GaNcapacitor with low interface state density

resolves10.1016/j.mee.2013.03.108

Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures

resolves10.1109/EDSSC.2018.8487160

Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs

resolves10.1063/1.2924334

Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

resolves10.1063/1.4905945

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

resolves10.1063/1.3224852

Photoassisted high-frequency capacitance-voltage characterization of the Si3N4/GaN interface

resolves10.1103/PhysRevB.10.676

Fundamental energy gap of GaN from photoluminescence excitation spectra

resolves10.1063/1.1868059

Luminescence properties of defects in GaN

resolves10.1143/JJAP.19.2395

Mechanism of Yellow Luminescence in GaN

resolves10.1016/j.optmat.2016.09.003

Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence

resolves10.3390/ma6031050

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

resolves10.1016/S0026-2714(99)00051-7

Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

resolves10.1109/ESSDERC.2015.7324714

Technology and design of GaN power devices

resolves10.1109/IRPS.2014.6861129

Electrical characterization and reliability analysis of Al<inf>2</inf>O<inf>3</inf>/AlGaN/GaN MISH structure

resolves10.1109/IRPS.2015.7112769

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

resolves10.1109/IRPS.2016.7574531

Progressive breakdown in high-voltage GaN MIS-HEMTs

resolves10.1109/IRPS45951.2020.9129098

Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors

resolves10.1016/j.microrel.2018.06.044

Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments

resolves10.1016/j.microrel.2017.06.061

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

resolves10.1016/j.microrel.2020.113872

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate

resolves10.1109/TED.2019.2938598

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

resolves10.1063/1.4935223

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

resolves10.1109/TED.2016.2553721

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

resolves10.1016/j.microrel.2016.07.127

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

resolves10.1109/LED.2016.2631640

Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

resolves10.1016/j.microrel.2015.11.026

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

resolves10.1109/ISPSD.2019.8757574

Temperature-Dependent Gate Degradation of $p$-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress

resolves10.1109/IRPS.2017.7936311

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

resolves10.1109/IRPS.2017.7936310

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

resolves10.1063/1.5109301

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

resolves10.1109/TED.2019.2924675

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs

resolves10.1109/LED.2016.2535133

Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress

resolves10.1016/j.microrel.2018.06.041

Degradation of GaN-on-GaN vertical diodes submitted to high current stress

resolves10.1109/JQE.2012.2203795

Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes

resolves10.1109/MIKON.2016.7492013

Reliability of Gallium Nitride microwave transistors

resolves10.3390/mi5030570

Reliability Investigation of GaN HEMTs for MMICs Applications

resolves10.1016/j.microrel.2018.07.122

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

resolves10.1109/LED.2015.2474116

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

resolves10.1016/j.microrel.2019.113434

S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

resolves10.1109/IRPS.2017.7936308

Reliability of hybrid-drain-embedded gate injection transistor

resolves10.1109/IRPS.2018.8353579

Degradation of vertical GaN FETs under gate and drain stress

resolves10.1109/TED.2015.2446032

Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

resolves10.1109/TED.2018.2802449

2DEG Retraction and Potential Distribution of GaN–on–Si HEMTs Investigated Through a Floating Gate Terminal

resolves10.1063/1.125560

Extensional piezoelectric coefficients of gallium nitride and aluminum nitride

resolves10.1109/TED.2013.2267547

AlGaN/GaN HEMT Degradation: An Electro-Thermo-Mechanical Simulation

resolves10.1109/ISPSD.2016.7520788

Reverse-biased induced mechanical stress in AlGaN/GaN power diodes

resolves10.1109/IEDM.2006.346799

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

resolves10.1109/IEDM.2008.4796725

Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors

resolves10.1109/LED.2008.917815

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

resolves10.1109/TDMR.2010.2103314

Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors

resolves10.1063/1.3446869

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

resolves10.1063/1.3665065

Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

resolves10.1109/TED.2013.2293114

Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs

resolves10.1063/1.4881637

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

resolves10.1109/IEDM.2010.5703398

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

resolves10.1109/LED.2016.2543805

Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes

resolves10.1109/TED.2017.2726440

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

resolves10.1016/j.microrel.2019.113461

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

resolves10.3390/mi11010101

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

resolves10.1109/TED.2020.2964060

Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications

resolves10.1063/5.0031504

On impact ionization and avalanche in gallium nitride

resolves10.1063/1.5099245

Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures

resolves10.1063/1.5031785

Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

resolves10.1109/IEDM19573.2019.8993438

Impact Ionization Coefficients in GaN Measured by Above- and Sub-Eg Illuminations for p−/n+ Junction

resolves10.1016/j.microrel.2019.02.013

Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

resolves10.1109/TED.2019.2943014

Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

resolves10.1016/j.microrel.2019.06.080

Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs

resolves10.1109/TED.2020.3025983

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

resolves10.1109/TED.2020.2968212

The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs

resolves10.1109/IRPS.2014.6861112

Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

resolves10.1016/j.microrel.2020.113830

A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects

resolves10.1049/iet-pel.2019.1455

Fast System to measure the dynamic on‐resistance of on‐wafer 600 V normally off GaN HEMTs in hard‐switching application conditions

resolves10.1109/LED.2021.3067796

A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs

resolves10.1109/LED.2011.2181815

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

resolves10.1016/S0038-1101(03)00295-8

Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes

resolves10.1109/TDMR.2012.2217746

HBM ESD Robustness of GaN-on-Si Schottky Diodes

resolves10.1109/IRPS.2016.7574608

Unique ESD behavior and failure modes of AlGaN/GaN HEMTs

resolves10.1109/TED.2015.2463713

Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs

resolves10.1049/iet-pel.2017.0403

Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

resolves10.1039/C2TC00039C

Radiation effects in GaN materials and devices

resolves10.1149/2.0251602jss

Review—Ionizing Radiation Damage Effects on GaN Devices

resolves10.1016/j.mser.2015.05.001

Deep traps in GaN-based structures as affecting the performance of GaN devices

resolves10.1109/TED.2018.2881325

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

resolves10.1109/TNS.2004.825077

The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors

resolves10.1116/1.4788904

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

resolves10.1109/TNS.2003.821827

Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence

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Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers

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High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

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Band gap bowing parameter in pseudomorphic AlxGa1−xN/GaN high electron mobility transistor structures

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Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

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Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

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Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

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