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Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

41/41 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

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The 41 checked references that resolve

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Recent progress of GaN power devices for automotive applications

resolves10.1063/5.0050793

Impact ionization coefficients and critical electric field in GaN

resolves10.1063/5.0014528

Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy

resolves10.1063/1.360405

Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

resolves10.1143/APEX.3.081001

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

resolves10.1109/TED.2017.2662702

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

resolves10.1143/JJAP.46.L503

A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

resolves10.7567/APEX.8.054101

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

resolves10.1109/LED.2011.2167125

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

resolves10.1109/LED.2015.2506638

1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

resolves10.1109/LED.2015.2474817

4-kV and 2.8-$\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents

resolves10.1016/j.jcrysgro.2016.08.030

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

resolves10.7567/APEX.11.041001

Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations

resolves10.1063/1.3492841

Carbon impurities and the yellow luminescence in GaN

resolves10.1103/PhysRevLett.110.087404

Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes

resolves10.1103/PhysRevB.89.035204

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

resolves10.1063/1.5057373

The origin of carbon-related carrier compensation in p-type GaN layers grown by MOVPE

resolves10.1016/j.jcrysgro.2009.01.046

Bulk GaN crystals grown by HVPE

resolves10.1117/12.2257202

Recent progress of high-quality GaN substrates by HVPE method

resolves10.1007/s10854-016-4536-z

IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates

resolves10.7567/APEX.11.045502

Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy

resolves10.1016/j.mssp.2019.02.037

Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate

resolves10.7567/JJAP.56.085503

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

resolves10.1063/1.5098965

Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

resolves10.1063/5.0051692

Substantial and simultaneous reduction of major electron traps and residual carbon in homoepitaxial GaN layers

resolves10.1063/1.1914952

Characterization of AlGaN∕GaNp-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors

resolves10.1063/1.3285309

High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

resolves10.1063/1.5052479

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

resolves10.1063/5.0049473

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

resolves10.35848/1882-0786/ab9166

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

resolves10.1016/j.jcrysgro.2021.126173

Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy

resolves10.35848/1347-4065/aba0d5

Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

resolves10.7567/1882-0786/aafdb9

Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

resolves10.7567/1347-4065/ab106c

Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

resolves10.1016/0022-0248(94)91053-7

A study on strong memory effects for Mg doping in GaN metalorganic chemical vapor deposition

resolves10.1063/1.4937436

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

resolves10.1109/TED.2015.2502186

Vertical GaN Power Diodes With a Bilayer Edge Termination

resolves10.1063/1.5024704

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

resolves10.35848/1882-0786/abe3dc

Experimental demonstration of GaN IMPATT diode at X-band

resolves10.1109/LED.2013.2294175

3.7 kV Vertical GaN PN Diodes

resolves10.7567/1347-4065/ab1250

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates

The 1 reference without a DOI — listed, not checked

no DOI — not checkedIEDM Technical Digest

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