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Artificial synaptic device and neural network based on the FeGa/PMN-PT/FeGa memtranstor

29/29 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 29 checked references that resolve

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resolves10.1021/nl904092h

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

resolves10.1002/adma.201203680

A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

resolves10.1038/ncomms3072

Pattern classification by memristive crossbar circuits using ex situ and in situ training

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A Synaptic Transistor based on Quasi‐2D Molybdenum Oxide

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Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

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Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

resolves10.1038/nnano.2016.70

Stochastic phase-change neurons

resolves10.1007/s11433-019-1499-3

Spintronic devices for neuromorphic computing

resolves10.7567/APEX.10.013007

Analogue spin–orbit torque device for artificial-neural-network-based associative memory operation

resolves10.1063/1.5115183

Physical reservoir computing using magnetic skyrmion memristor and spin torque nano-oscillator

resolves10.1038/ncomms14736

Learning through ferroelectric domain dynamics in solid-state synapses

resolves10.1109/TED.2014.2331707

Ferroelectric Artificial Synapses for Recognition of a Multishaded Image

resolves10.1002/adma.201706717

Mimicking Synaptic Plasticity and Neural Network Using Memtranstors

resolves10.1088/1361-6463/ab3b33

Artificial synaptic device based on a multiferroic heterostructure

resolves10.1021/acsami.9b19510

Nonvolatile Memory and Artificial Synapse Based on the Cu/P(VDF-TrFE)/Ni Organic Memtranstor

resolves10.1088/1674-1056/24/6/068402

Toward the complete relational graph of fundamental circuit elements

resolves10.1103/PhysRevApplied.6.021001

Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects

resolves10.1038/srep34473

A multilevel nonvolatile magnetoelectric memory

resolves10.1103/PhysRevApplied.6.064028

Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Ni</mml:mi><mml:mo>/</mml:mo><mml:mo stretchy="false">[</mml:mo><mml:mi>Pb</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:msub><mml:mrow><mml:mi>Mg</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>Nb</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:mo stretchy="false">)</mml:mo><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mo stretchy="false">]</mml:mo></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub><mml:mo stretchy="false">[</mml:mo><mml:msub><mml:mrow><mml:mi>PbTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mo stretchy="false">]</mml:mo></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub><mml:mo stretchy="false">/</mml:mo><mml:mi>Ni</mml:mi></mml:mrow></mml:math> Heterostructure

resolves10.1063/1.1450791

Origin of large magnetostriction in FeGa alloys

resolves10.1038/srep03521

Understanding strong magnetostriction in Fe100−xGax alloys

resolves10.1063/1.4769365

Tunable self-biased magnetoelectric response in homogenous laminates

resolves10.1146/annurev.neuro.31.060407.125639

Spike Timing–Dependent Plasticity: A Hebbian Learning Rule

resolves10.1038/nmat3054

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses

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