Reference health

A perspective on multi-channel technology for the next-generation of GaN power devices

66/66 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 66 checked references that resolve

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The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching

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1200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance

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High conductivity InAlN/GaN multi-channel two-dimensional electron gases

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Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

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GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers

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3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

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10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

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Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse

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5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode

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Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV

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High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

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650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

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Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current

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Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

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resolves10.1109/LED.2011.2179971

Tri-Gate Normally-Off GaN Power MISFET

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High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate

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High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

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resolves10.1109/TED.2020.3002880

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Slanted Tri-Gates for High-Voltage GaN Power Devices

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2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current

resolves10.1109/TED.2017.2706090

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

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Ultralow Leakage Current AlGaN/GaN Schottky Diodes With 3-D Anode Structure

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Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

resolves10.1063/5.0074543

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

resolves10.1063/5.0025351

Tri-gate GaN junction HEMT

resolves10.1109/TED.2021.3103157

Tri-Gate GaN Junction HEMTs: Physics and Performance Space

resolves10.1088/1361-6641/abde17

GaN FinFETs and trigate devices for power and RF applications: review and perspective

resolves10.1109/TED.2022.3151558

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

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Improvement of unipolar power device performance using a polarization junction

resolves10.1109/LED.2008.2002753

Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor

resolves10.1109/ISPSD.2015.7123442

Design and optimization of GaN lateral polarization-doped super-junction (LPSJ): An analytical study

resolves10.1109/IEDM.2008.4796636

GaN-based natural super junction diodes with multi-channel structures

resolves10.1109/LED.2011.2105242

GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

resolves10.1109/JEDS.2021.3125742

Figures-of-Merit of Lateral GaN Power Devices: Modeling and Comparison of HEMTs and PSJs

resolves10.1109/TED.2019.2953843

Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode

resolves10.1002/pssa.201900692

AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment

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β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm

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Vertical Ga2O3Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2

resolves10.1109/ISPSD46842.2020.9170170

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

resolves10.1063/5.0005531

High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

resolves10.35848/1882-0786/abd675

Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O3 heterostructure channels

resolves10.1063/1.5037095

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

resolves10.1116/1.5129803

Al-rich AlGaN based transistors

resolves10.1016/j.spmi.2021.106952

GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V

The 2 references without a DOI — listed, not checked

no DOI — not checkedFundamentals of Power Semiconductor Devices

no DOI — not checkedAnalytical model for multi-channel high-electron-mobility III-N heterostructures

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