Reference health

Thickness scaling of ferroelectricity in BiFeO <sub>3</sub> by tomographic atomic force microscopy

https://doi.org/10.1073/pnas.1806074116
CiteStamped reference-health badge
42/42 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 42 checked references that resolve
resolves10.1103/PhysRevLett.107.217202
Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure
resolves10.1038/nature14004
Deterministic switching of ferromagnetism at room temperature using an electric field
resolves10.1021/nl900723j
Nanoscale Control of Domain Architectures in BiFeO<sub>3</sub> Thin Films
resolves10.1002/adma.200800823
Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films
resolves10.1103/PhysRevB.84.094105
Epitaxial strain and electric boundary condition effects on the structural and ferroelectric properties of BiFeO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>films
resolves10.1021/nl801391m
Nanoscale Control of Exchange Bias with BiFeO<sub>3</sub> Thin Films
resolves10.1103/PhysRevLett.100.017204
Mechanisms of Exchange Bias with Multiferroic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Epitaxial Thin Films
resolves10.1103/PhysRevLett.100.027602
Fractal Dimension and Size Scaling of Domains in Thin Films of Multiferroic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>
resolves10.1080/00150193.2015.1012414
Thickness Dependence of Domain-Wall Patterns in BiFeO<sub>3</sub>Thin Films
resolves10.1103/PhysRevB.81.144115
Tuning the atomic and domain structure of epitaxial films of multiferroic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>BiFeO</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevLett.105.147603
Kittel Law in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Ultrathin Films: A First-Principles-Based Study
resolves10.1063/1.2830799
Effect of epitaxial strain on ferroelectric polarization in multiferroic BiFeO3 films
resolves10.1103/PhysRevLett.109.267601
Thickness-Dependent Polarization of Strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Films with Constant Tetragonality
resolves10.1103/PhysRevB.85.014119
Ultrathin limit and dead-layer effects in local polarization switching of BiFeO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>
resolves10.1088/1367-2630/14/5/053040
Ferroelectric domain scaling and switching in ultrathin BiFeO<sub>3</sub>films deposited on vicinal substrates
resolves10.1063/1.2750524
Ferroelectric size effects in multiferroic BiFeO3 thin films
resolves10.1038/ncomms15768
Non-Ising and chiral ferroelectric domain walls revealed by nonlinear optical microscopy
resolves10.1002/andp.201700139
Three‐Dimensional, Time‐Resolved Profiling of Ferroelectric Domain Wall Dynamics by Spectral‐Domain Optical Coherence Tomography
resolves10.1021/acsnano.7b01199
Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals
resolves10.1088/0957-4484/22/18/185702
Material sensitive scanning probe microscopy of subsurface semiconductor nanostructures via beam exit Ar ion polishing
resolves10.1088/1361-6528/aa67c2
Ion-damage-free planarization or shallow angle sectioning of solar cells for mapping grain orientation and nanoscale photovoltaic properties
resolves10.1126/science.257.5068.375
Machining Oxide Thin Films with an Atomic Force Microscope: Pattern and Object Formation on the Nanometer Scale
resolves10.1088/0957-4484/11/3/308
Machining characterization of the nano-lithography process using atomic force microscopy
resolves10.1002/smll.200901947
Top‐Down Nanomechanical Machining of Three‐Dimensional Nanostructures by Atomic Force Microscopy
resolves10.1063/1.118712
Nanostructure patterns written in III–V semiconductors by an atomic force microscope
resolves10.1063/1.122553
Direct patterning of surface quantum wells with an atomic force microscope
resolves10.1063/1.124611
Nanomachining of mesoscopic electronic devices using an atomic force microscope
resolves10.1021/acs.nanolett.5b03078
Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory
resolves10.1021/nl500049g
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
resolves10.1038/nenergy.2016.150
Charge transport in CdTe solar cells revealed by conductive tomographic atomic force microscopy
resolves10.1126/science.1218693
Mechanical Writing of Ferroelectric Polarization
resolves10.1103/PhysRevB.65.125408
Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces
resolves10.1088/0957-4484/17/14/010
Spatial resolution, information limit, and contrast transfer in piezoresponse force microscopy
resolves10.1111/j.1551-2916.2012.05099.x
High Speed <scp>SPM</scp> Applied for Direct Nanoscale Mapping of the Influence of Defects on Ferroelectric Switching Dynamics
resolves10.1063/1.1722712
Electrostatic Considerations in BaTiO3 Domain Formation during Polarization Reversal
resolves10.1080/14786436208214471
Thickness dependence of the nucleation field of triglycine sulphate
resolves10.1080/00150190490891157
Scaling of the Coercive Field with Thickness in Thin-Film Ferroelectrics
resolves10.1103/PhysRevLett.84.175
Intrinsic Ferroelectric Coercive Field
resolves10.1103/PhysRevLett.97.247602
Polarization Switching Dynamics Governed by the Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films
resolves10.1088/0953-8984/15/24/106
Depolarization corrections to the coercive field in thin-film ferroelectrics
resolves10.1063/1.2402238
Coercive fields in ultrathin BaTiO3 capacitors
resolves10.1038/nmat2432
Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

Embed this badge

Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.

<a href="https://citestamp.com/citestamped/10.1073/pnas.1806074116"><img src="https://citestamp.com/citestamped/10.1073/pnas.1806074116/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[![CiteStamped reference-health badge](https://citestamp.com/citestamped/10.1073/pnas.1806074116/badge.svg)](https://citestamp.com/citestamped/10.1073/pnas.1806074116)