Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 42 checked references that resolve
resolves10.1038/nature14004Deterministic switching of ferromagnetism at room temperature using an electric field
resolves10.1021/nl900723jNanoscale Control of Domain Architectures in BiFeO<sub>3</sub> Thin Films
resolves10.1002/adma.200800823Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films
resolves10.1103/PhysRevB.84.094105Epitaxial strain and electric boundary condition effects on the structural and ferroelectric properties of BiFeO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>films
resolves10.1021/nl801391mNanoscale Control of Exchange Bias with BiFeO<sub>3</sub> Thin Films
resolves10.1103/PhysRevLett.100.017204Mechanisms of Exchange Bias with Multiferroic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Epitaxial Thin Films
resolves10.1103/PhysRevLett.100.027602Fractal Dimension and Size Scaling of Domains in Thin Films of Multiferroic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevB.81.144115Tuning the atomic and domain structure of epitaxial films of multiferroic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>BiFeO</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevLett.105.147603Kittel Law in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Ultrathin Films: A First-Principles-Based Study
resolves10.1063/1.2830799Effect of epitaxial strain on ferroelectric polarization in multiferroic BiFeO3 films
resolves10.1103/PhysRevLett.109.267601Thickness-Dependent Polarization of Strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Films with Constant Tetragonality
resolves10.1103/PhysRevB.85.014119Ultrathin limit and dead-layer effects in local polarization switching of BiFeO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>
resolves10.1088/1367-2630/14/5/053040Ferroelectric domain scaling and switching in ultrathin BiFeO<sub>3</sub>films deposited on vicinal substrates
resolves10.1063/1.2750524Ferroelectric size effects in multiferroic BiFeO3 thin films
resolves10.1038/ncomms15768Non-Ising and chiral ferroelectric domain walls revealed by nonlinear optical microscopy
resolves10.1002/andp.201700139Three‐Dimensional, Time‐Resolved Profiling of Ferroelectric Domain Wall Dynamics by Spectral‐Domain Optical Coherence Tomography
resolves10.1088/0957-4484/22/18/185702Material sensitive scanning probe microscopy of subsurface semiconductor nanostructures via beam exit Ar ion polishing
resolves10.1088/1361-6528/aa67c2Ion-damage-free planarization or shallow angle sectioning of solar cells for mapping grain orientation and nanoscale photovoltaic properties
resolves10.1126/science.257.5068.375Machining Oxide Thin Films with an Atomic Force Microscope: Pattern and Object Formation on the Nanometer Scale
resolves10.1002/smll.200901947Top‐Down Nanomechanical Machining of Three‐Dimensional Nanostructures by Atomic Force Microscopy
resolves10.1063/1.118712Nanostructure patterns written in III–V semiconductors by an atomic force microscope
resolves10.1063/1.122553Direct patterning of surface quantum wells with an atomic force microscope
resolves10.1063/1.124611Nanomachining of mesoscopic electronic devices using an atomic force microscope
resolves10.1021/nl500049gThree-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
resolves10.1038/nenergy.2016.150Charge transport in CdTe solar cells revealed by conductive tomographic atomic force microscopy
resolves10.1111/j.1551-2916.2012.05099.xHigh Speed
<scp>SPM</scp>
Applied for Direct Nanoscale Mapping of the Influence of Defects on Ferroelectric Switching Dynamics
resolves10.1063/1.1722712Electrostatic Considerations in BaTiO3 Domain Formation during Polarization Reversal
resolves10.1103/PhysRevLett.97.247602Polarization Switching Dynamics Governed by the Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films
resolves10.1038/nmat2432Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films
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