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Electrical properties of undoped In<sub>2</sub>O<sub>3</sub>films prepared by reactive evaporation

https://doi.org/10.1088/0022-3727/13/6/023
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18/18 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

9 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 18 checked references that resolve
resolves10.1007/BF00889507
Ionized impurity scattering in degenerate In2O3
resolves10.1116/1.569106
Magnetron dc reactive sputtering of titanium nitride and indium–tin oxide
resolves10.1149/1.2134117
Properties of Sn‐Doped In2 O 3 Films Prepared by RF Sputtering
resolves10.1364/AO.15.001012
Transparent heat mirrors for solar-energy applications
resolves10.1002/pssb.19660140104
Untersuchungen an halbleitenden Indiumoxydschichten
resolves10.1007/BF00885119
Hf-sputtered indium oxide films doped with tin
resolves10.1143/JJAP.17.1191
Properties of Sn-Doped Indium Oxide Prepared by High Rate and Low Temperature RF Sputtering
resolves10.1103/PhysRev.71.374
Transition from Classical to Quantum Statistics in Germanium Semiconductors at Low Temperature
resolves10.1016/0040-6090(75)90224-2
Chemical vapor deposition of transparent electrically conducting layers of indium oxide doped with tin
resolves10.1143/JJAP.14.915
Photoelectric Effects of In<sub>2</sub>O<sub>3</sub>-<i>p</i>Si Diodes
resolves10.1002/pssb.19680270229
Electrical and Optical Properties of Sputtered In<sub>2</sub>O<sub>3</sub> films. I. Electrical Properties and Intrinsic Absorption
resolves10.1116/1.568679
Thin film formation of In2O3, TiN, and TaN by rf reactive ion plating
resolves10.1143/JJAP.15.199
Electrical and Optical Properties of In<sub>2</sub>O<sub>3</sub>/<i>n</i>-Si Photodiodes
resolves10.1007/BF01374559
Untersuchungen der elektrischen und lichtelektrischen Leitf�higkeit d�nner Indiumoxydschichten
resolves10.1016/0040-6090(68)90020-5
The preparation of thin films of some oxides by the pyrolysis method
resolves10.1016/0040-6090(72)90296-9
The properties of very thin R.F. sputtered transparent conducting films of SnO2:Sb and In2O3:Sn
resolves10.1063/1.1702560
Electrical Properties of Single Crystals of Indium Oxide
resolves10.1063/1.1707830
Optical Properties of Indium Oxide
The 9 references without a DOI — listed, not checked
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no DOI — not checked6
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no DOI — not checked13
no DOI — not checked18
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no DOI — not checked24
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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