Reference health
Temperature-dependent GaSb material parameters for reliable thermophotovoltaic cell modelling
49/49 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
23 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 49 checked references that resolve
resolves10.1016/S0022-0248(97)00186-3
Study of Zn diffusion into GaSb from the vapour and liquid phase
resolves10.1063/1.365356
The physics and technology of gallium antimonide: An emerging optoelectronic material
resolves10.1109/16.902740
Efficiency and power density potential of combustion-driven thermophotovoltaic systems using GaSb photovoltaic cells
resolves10.1103/PhysRev.95.51
Some Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type Gallium Antimonide between 15°K and 925°K
resolves10.1103/PhysRevB.19.3159
Electrical transport mechanism in the conduction band of gallium antimonide studied from Hall-mobility and transverse-magnetoresistance measurements
resolves10.1016/0038-1101(94)00142-3
Simulation of bandgap narrowing and incomplete ionization in strained Si1−xGex alloys on 〈001〉 Si substrate (for temperatures from 40 K up to 400 K)
resolves10.1016/0038-1101(92)90325-7
A unified mobility model for device simulation—I. Model equations and concentration dependence
resolves10.1109/T-ED.1982.20698
Electron and hole mobilities in silicon as a function of concentration and temperature
resolves10.1016/0038-1101(93)90213-A
Temperature, electric field, and doping dependent mobilities of electrons and holes in semiconductors
resolves10.1063/1.372274
Empirical low-field mobility model for III–V compounds applicable in device simulation codes
resolves10.1016/0038-1101(90)90182-E
Device-related material properties of heavily doped gallium arsenide
resolves10.1063/1.114974
Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs
resolves10.1007/BF02651744
Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide
resolves10.1063/1.337881
GaSb films grown by vacuum chemical epitaxy using triethyl antimony and triethyl gallium sources
resolves10.1143/JJAP.17.2091
Molecular Beam Epitaxy of GaSb and GaSb<sub><i>x</i></sub>As<sub>1-<i>x</i></sub>
resolves10.1007/BF02652109
N- type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source
resolves10.1016/0022-0248(91)91051-B
Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe
resolves10.1103/PhysRev.96.576
Electrical and Optical Properties of Intermetallic Compounds. II. Gallium Antimonide
resolves10.1103/PhysRev.121.1087
Electrical Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type GaSb
resolves10.1088/0268-1242/3/12/002
Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy
resolves10.1016/S0022-0248(96)00543-X
Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide
resolves10.1016/S0022-0248(98)00710-6
p-Type and n-type doping in GaSb and Ga0.8In0.2Sb layers grown by metalorganic vapor phase epitaxy
resolves10.1016/S0022-0248(99)00379-6
Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2
resolves10.1063/1.322626
Concentration-dependent absorption and spontaneous emission of heavily doped GaAs
resolves10.1063/1.321330
Concentration dependence of the absorption coefficient for <i>n</i>− and <i>p</i>−type GaAs between 1.3 and 1.6 eV
resolves10.1016/0927-0248(95)00082-8
TPV cell IV curve testing with varying black body emission temperatures, intensities, and cell temperatures
resolves10.1016/0927-0248(95)00030-5
Theoretical study of GaSb PV cells efficiency as a function of temperature
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