Reference health

Trapping phenomena in AlGaN/GaN HEMTs: a study based on pulsed and transient measurements

https://doi.org/10.1088/0268-1242/28/7/074021

23/23 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 23 checked references that resolve

resolves10.1109/16.906451

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

resolves10.1109/TDMR.2008.923743

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

resolves10.1109/LED.2004.832788

Drain Current DLTS of AlGaN–GaN MIS-HEMTs

resolves10.1109/TED.2010.2087339

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

resolves10.1063/1.2424670

Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy

resolves10.1109/TED.2011.2160547

Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

resolves10.1109/TED.2012.2198652

Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

resolves10.1109/LED.2010.2047092

Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress

resolves10.1116/1.3139882

Current collapse transient behavior and its mechanism in submicron-gate AlGaN∕GaN heterostructure transistors

resolves10.1109/LED.2006.871177

Observation of surface charging at the edge of a Schottky contact

resolves10.1063/1.2775834

Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕GaN heterostructures

resolves10.1116/1.1589520

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

resolves10.1063/1.1687983

Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

resolves10.1109/LED.2011.2181815

Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate

resolves10.1016/j.spmi.2003.12.002

Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

resolves10.1109/TED.2009.2032614

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

resolves10.1002/pssc.200778622

Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films

resolves10.1016/S0022-0248(00)00982-9

Electron traps and growth rate of buffer layers in unintentionally doped GaN

resolves10.1117/12.591047

Comparison of deep levels in GaN grown by MBE, MOCVD, and HVPE

resolves10.1109/IRPS.2009.5173339

False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs

resolves10.1007/s11664-007-0313-3

Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition

resolves10.1016/S0921-4526(01)00938-3

Defect characterization by DLTS of AlGaN UV Schottky photodetectors

resolves10.1063/1.116080

Deep levels in the upper band-gap region of lightly Mg-doped GaN

The 3 references without a DOI — listed, not checked

no DOI — not checked3

no DOI — not checked19

no DOI — not checked24

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

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