Reference health

Surface roughness induced electron mobility degradation in InAs nanowires

https://doi.org/10.1088/0957-4484/24/37/375202

27/27 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 27 checked references that resolve

resolves10.1021/nl3040674

Ballistic InAs Nanowire Transistors

resolves10.1021/nl903322s

Patterned p-Doping of InAs Nanowires by Gas-Phase Surface Diffusion of Zn

resolves10.1021/nl803154m

Diameter-Dependent Electron Mobility of InAs Nanowires

resolves10.1007/s12274-008-8009-4

Synthesis, contact printing, and device characterization of Ni-catalyzed, crystalline InAs nanowires

resolves10.1021/nl072024a

InAs/InP Radial Nanowire Heterostructures as High Electron Mobility Devices

resolves10.1109/LED.2006.873371

Vertical high-mobility wrap-gated InAs nanowire transistor

resolves10.1002/smll.200600379

High Electron Mobility InAs Nanowire Field‐Effect Transistors

resolves10.1021/nl052468b

Improved Subthreshold Slope in an InAs Nanowire Heterostructure Field-Effect Transistor

resolves10.1063/1.4794414

Diameter dependence of electron mobility in InGaAs nanowires

resolves10.1038/nnano.2011.196

Electrical contacts to one- and two-dimensional nanomaterials

resolves10.1063/1.3611032

Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

resolves10.1038/nature06381

Enhanced thermoelectric performance of rough silicon nanowires

resolves10.1109/TED.2008.2005164

Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

resolves10.1103/PhysRevLett.97.026804

Size-Dependent Effects on Electrical Contacts to Nanotubes and Nanowires

resolves10.1063/1.3270259

Diameter-dependent conductance of InAs nanowires

resolves10.1002/smll.200800969

Transport Coefficients of InAs Nanowires as a Function of Diameter

resolves10.1103/PhysRevB.77.085301

Quantum transport length scales in silicon-based semiconducting nanowires: Surface roughness effects

resolves10.1063/1.2802586

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

resolves10.1007/s10825-008-0245-z

Semiclassical transport in silicon nanowire FETs including surface roughness

resolves10.1021/nn300966j

Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices

resolves10.1021/nl904053j

Correlating the Nanostructure and Electronic Properties of InAs Nanowires

resolves10.1039/c2cp44213b

Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors

resolves10.1021/jp910821e

Diameter Dependence of the Wurtzite−Zinc Blende Transition in InAs Nanowires

resolves10.1038/nnano.2008.359

Controlled polytypic and twin-plane superlattices in iii–v nanowires

resolves10.1063/1.2337853

Gate capacitance of back-gated nanowire field-effect transistors

resolves10.1063/1.2977758

Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering

resolves10.1103/PhysRevB.86.115328

Thermoelectric properties of ultrathin silicon nanowires

The 3 references without a DOI — listed, not checked

no DOI — not checked10

no DOI — not checked15

no DOI — not checked23

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

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