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Fast Fourier transform scanning spreading resistance microscopy: a novel technique to overcome the limitations of classical conductive AFM techniques

https://doi.org/10.1088/0957-4484/26/35/355702
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17/17 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

9 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 17 checked references that resolve
resolves10.1103/PhysRevLett.89.025502
Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography
resolves10.1063/1.114207
Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy
resolves10.1116/1.1627792
Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy
resolves10.1116/1.589810
Cross-sectional nano-spreading resistance profiling
resolves10.1007/978-0-387-28668-6_3
Probing Semiconductor Technology and Devices with Scanning Spreading Resistance Microscopy
resolves10.1063/1.1490399
Three-dimensional carrier profiling of InP-based devices using scanning spreading resistance microscopy
resolves10.1016/j.ultramic.2012.10.008
Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy
resolves10.1149/1.2355836
2D-TCAD Process Calibration for a High Speed QSA SiGe:C HBT Verified with SSRM
resolves10.1149/1.3700460
Integration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
resolves10.1016/j.sse.2012.04.009
Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations
resolves10.1088/0957-4484/22/18/185701
Observation of diameter dependent carrier distribution in nanowire-based transistors
resolves10.1063/1.4790438
Diameter-dependent boron diffusion in silicon nanowire-based transistors
resolves10.1063/1.126109
Highly conductive diamond probes for scanning spreading resistance microscopy
resolves10.1063/1.4795141
A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications
resolves10.1116/1.2805250
Impact of the environmental conditions on the electrical characteristics of scanning spreading resistance microscopy
resolves10.1109/ESSCIRC.2011.6044913
High-k/metal gate innovations enabling continued CMOS scaling
resolves10.1109/TED.2014.2327759
Accurate Prediction of Device Performance Based on 2-D Carrier Profiles in the Presence of Extensive Mobile Carrier Diffusion
The 9 references without a DOI — listed, not checked
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no DOI — not checked23
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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