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Contactless electroreflectance study of the surface potential barrier in <i>n</i> -type and <i>p</i> -type InAlAs van Hoof structures lattice matched to InP
24/24 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 24 checked references that resolve
resolves10.1109/LPT.2012.2194484
Dielectric-Free Fabrication of Compact 30-GHz Photodetectors Using the Isolated Pedestal Contact Configuration
resolves10.1063/1.4903971
Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs high electron mobility transistor
resolves10.1016/j.spmi.2015.06.048
A review of InP/InAlAs/InGaAs based transistors for high frequency applications
resolves10.1109/JSTQE.2017.2677899
MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance
resolves10.1016/j.jcrysgro.2017.02.031
MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers
resolves10.1063/1.4758300
Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency &gt;50%
resolves10.1063/1.4770413
Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures
resolves10.1016/j.apsusc.2016.12.013
Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface
resolves10.1063/1.106456
Measurements of Al-AlInAs Schottky barriers prepared <i>in</i> <i>situ</i> by molecular beam epitaxy
resolves10.1063/1.353245
Barrier height lowering of Schottky contacts on AlInAs layers grown by metal-organic chemical-vapor deposition
resolves10.1063/1.370329
Investigation of optical properties of interfaces between heavily doped Al0.48In0.52As:Si and InP (Fe) substrates by photoreflectance analysis
resolves10.1063/1.100893
Franz–Keldysh oscillations originating from a well-controlled electric field in the GaAs depletion region
resolves10.1016/j.jcrysgro.2010.09.011
Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots
resolves10.1103/PhysRevB.86.165307
Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy
resolves10.1016/0039-6028(73)90337-3
Third-derivative modulation spectroscopy with low-field electroreflectance
resolves10.2478/s11772-012-0022-1
Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures
resolves10.1063/1.4917236
Electronic band structure of compressively strained Ge1−xSnx with x &lt; 0.11 studied by contactless electroreflectance
resolves10.1038/srep26663
Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions
resolves10.1016/j.mejo.2008.07.028
Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures
resolves10.1016/j.apsusc.2016.04.153
Native oxides formation and surface wettability of epitaxial III–V materials: The case of InP and GaAs
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