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Artificial synaptic device based on a multiferroic heterostructure

https://doi.org/10.1088/1361-6463/ab3b33
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27/27 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 27 checked references that resolve
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A multi-state memory device based on the unidirectional spin Hall magnetoresistance
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A Synaptic Transistor based on Quasi‐2D Molybdenum Oxide
resolves10.1038/nmat4756
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
resolves10.1038/ncomms15199
Face classification using electronic synapses
resolves10.1002/adfm.201704455
Synaptic Suppression Triplet‐STDP Learning Rule Realized in Second‐Order Memristors
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Mimicking Synaptic Plasticity and Neural Network Using Memtranstors
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resolves10.1103/PhysRevApplied.6.021001
Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects
resolves10.1103/PhysRevApplied.6.064028
Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Ni</mml:mi><mml:mo>/</mml:mo><mml:mo stretchy="false">[</mml:mo><mml:mi>Pb</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:msub><mml:mrow><mml:mi>Mg</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>Nb</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:mo stretchy="false">)</mml:mo><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mo stretchy="false">]</mml:mo></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub><mml:mo stretchy="false">[</mml:mo><mml:msub><mml:mrow><mml:mi>PbTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mo stretchy="false">]</mml:mo></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub><mml:mo stretchy="false">/</mml:mo><mml:mi>Ni</mml:mi></mml:mrow></mml:math> Heterostructure
resolves10.1038/srep34473
A multilevel nonvolatile magnetoelectric memory
resolves10.1063/1.4972304
Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures
resolves10.1002/adfm.201705771
Room‐Temperature Nonvolatile Memory Based on a Single‐Phase Multiferroic Hexaferrite
resolves10.1063/1.2836410
Multiferroic magnetoelectric composites: Historical perspective, status, and future directions
resolves10.1146/annurev-matsci-070909-104459
Magnetoelectric Composites
resolves10.1063/1.3485669
Multiferroicity and magnetoelectric coupling in half-doped manganite La0.5Ca0.5MnO3
resolves10.1523/JNEUROSCI.18-24-10464.1998
Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type
resolves10.1038/416433a
Spike-timing-dependent synaptic modification induced by natural spike trains
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