Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 45 checked references that resolve
resolves10.3390/s130810482A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
resolves10.1063/1.4889914High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film
resolves10.1063/1.2432946Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
resolves10.1143/JJAP.46.7217Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
resolves10.1021/acsphotonics.8b00174Ultrahigh Performance of Self-Powered β-Ga<sub>2</sub>O<sub>3</sub> Thin Film Solar-Blind Photodetector Grown on Cost-Effective Si Substrate Using High-Temperature Seed Layer
resolves10.1021/acsphotonics.7b00359Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide
resolves10.1021/acsami.7b09812Solar-Blind Photodetector with High Avalanche Gains and Bias-Tunable Detecting Functionality Based on Metastable Phase α-Ga<sub>2</sub>O<sub>3</sub>/ZnO Isotype Heterostructures
resolves10.1039/C8TC01122BSelf-powered diamond/β-Ga
<sub>2</sub>
O
<sub>3</sub>
photodetectors for solar-blind imaging
resolves10.1002/adma.201604049Graphene‐<i>β</i>‐Ga<sub>2</sub>O<sub>3</sub> Heterojunction for Highly Sensitive Deep UV Photodetector Application
resolves10.1063/1.4984904High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
resolves10.1364/OME.4.001067Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
resolves10.1063/1.4890524Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in <i>β-</i>Ga2O3 solar-blind ultraviolet photodetectors
resolves10.1063/1.4773247Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition
resolves10.1364/OE.23.013554High gain Ga_2O_3 solar-blind photodetectors realized via a carrier multiplication process
resolves10.1109/TED.2016.2592984Comparison Study of <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga<sub>2</sub>O<sub>3</sub>Photodetectors on Bulk Substrate and Sapphire
resolves10.1002/adom.201700454Room‐Temperature Fabricated Amorphous Ga<sub>2</sub>O<sub>3</sub> High‐Response‐Speed Solar‐Blind Photodetector on Rigid and Flexible Substrates
resolves10.1002/pssa.201600688Solar blind photodetector based on epitaxial zinc doped Ga<sub>2</sub>O<sub>3</sub> thin film
resolves10.1016/j.rinp.2017.04.023First-principles calculations of electronic and optical properties of aluminum-doped β-Ga2O3 with intrinsic defects
resolves10.1364/OME.7.001240(AlGa)_2O_3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity
resolves10.1109/LED.2017.2782693Improved Responsivity Drop From 250 to 200 nm in Sputtered Gallium Oxide Photodetectors by Incorporating Trace Aluminum
resolves10.1021/acsphotonics.7b01486High Responsivity β-Ga<sub>2</sub>O<sub>3</sub> Metal–Semiconductor–Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes
resolves10.1149/2.0231708jssSolar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfoliated β-Ga<sub>2</sub>O<sub>3</sub>Micro-Flake
resolves10.1109/LPT.2018.2826560Arrays of Solar-Blind Ultraviolet Photodetector Based on <inline-formula>
<tex-math notation="LaTeX">$\beta$ </tex-math>
</inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Epitaxial Thin Films
resolves10.1063/1.3147197Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing
resolves10.1039/C8RA00523KSelf-powered SBD solar-blind photodetector fabricated on the single crystal of β-Ga
<sub>2</sub>
O
<sub>3</sub>
resolves10.1021/acsami.5b11956Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga<sub>2</sub>O<sub>3</sub> Nanowires Array Film Schottky Junction
resolves10.1021/acsami.6b13771Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga<sub>2</sub>O<sub>3</sub>/NSTO Heterojunction
resolves10.1039/C7TC01741CA self-powered deep-ultraviolet photodetector based on an epitaxial Ga
<sub>2</sub>
O
<sub>3</sub>
/Ga:ZnO heterojunction
resolves10.1116/1.4948361Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors
resolves10.1063/1.4818620Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction
resolves10.1515/nanoph-2018-0061Solar‐blind ultraviolet photodetector based on graphene/vertical Ga
<sub>2</sub>
O
<sub>3</sub>
nanowire array heterojunction
resolves10.1021/acsami.8b05336High-Performance Graphene/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunction Deep-Ultraviolet Photodetector with Hot-Electron Excited Carrier Multiplication
resolves10.1088/1361-6641/aa59b0Fabrication of
<i>β</i>
-Ga
<sub>2</sub>
O
<sub>3</sub>
/ZnO heterojunction for solar-blind deep ultraviolet photodetection
resolves10.1002/adfm.201700264An Ultrahigh Responsivity (9.7 mA W<sup>−1</sup>) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga<sub>2</sub>O<sub>3</sub> Heterostructures
resolves10.1002/adfm.201706379Piezo‐Phototronic Effect Modulated Deep UV Photodetector Based on ZnO‐Ga<sub>2</sub>O<sub>3</sub> Heterojuction Microwire
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