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Progress of power field effect transistor based on ultra-wide bandgap Ga<sub>2</sub>O<sub>3</sub>semiconductor material

https://doi.org/10.1088/1674-4926/40/1/011802
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69/69 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

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The 69 checked references that resolve
resolves10.1109/TPEL.2013.2268900
A Survey of Wide Bandgap Power Semiconductor Devices
resolves10.1109/TED.2017.2653759
Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors
resolves10.7567/JJAP.54.030101
Wide-bandgap semiconductor materials: For their full bloom
resolves10.1002/pssa.201330197
Development of gallium oxide power devices
resolves10.1088/0268-1242/31/3/034001
Recent progress in Ga<sub>2</sub>O<sub>3</sub>power devices
resolves10.1063/1.119233
Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
resolves10.1016/j.jcrysgro.2004.06.027
Large-size β-Ga2O3 single crystals and wafers
resolves10.1143/JJAP.47.8506
Growth of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by the Edge-Defined, Film Fed Growth Method
resolves10.1063/1.4945267
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on <i>n</i>––Ga2O3 drift layers grown by halide vapor phase epitaxy
resolves10.1063/1.4821858
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
resolves10.1063/1.3674287
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
resolves10.1063/1.4879800
High-voltage field effect transistors with wide-bandgap <i>β</i>-Ga2O3 nanomembranes
resolves10.1109/LED.2018.2830184
Enhancement-Mode Ga<sub>2</sub>O<sub>3</sub> Vertical Transistors With Breakdown Voltage &gt;1 kV
resolves10.1109/LED.2017.2779867
Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs
resolves10.1109/LED.2015.2512279
Field-Plated Ga<sub>2</sub>O<sub>3</sub>MOSFETs With a Breakdown Voltage of Over 750 V
resolves10.1109/LED.2016.2635579
High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm
resolves10.1109/LED.2018.2810858
Schottky Barrier Rectifier Based on (100) $\beta$ -Ga<sub>2</sub>O<sub>3</sub> and its DC and AC Characteristics
resolves10.1109/LED.2017.2696986
First Demonstration of Ga<sub>2</sub>O<sub>3</sub>Trench MOS-Type Schottky Barrier Diodes
resolves10.1063/1.4977857
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
resolves10.1021/ja01123a039
Polymorphism of Ga<sub>2</sub>O<sub>3</sub> and the System Ga<sub>2</sub>O<sub>3</sub>—H<sub>2</sub>O
resolves10.1103/PhysRev.140.A316
Optical Absorption and Photoconductivity in the Band Edge of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1063/1.3086392
Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)
resolves10.1063/1.3521255
The electronic structure of β-Ga2O3
resolves10.1088/1367-2630/13/8/085014
Experimental electronic structure of In<sub>2</sub>O<sub>3</sub>and Ga<sub>2</sub>O<sub>3</sub>
resolves10.7567/JJAP.55.1202BD
Structural evaluation of defects in β-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by edge-defined film-fed growth process
resolves10.1021/acs.inorgchem.6b02244
Crystal Structure and Ferroelectric Properties of ε-Ga<sub>2</sub>O<sub>3</sub> Films Grown on (0001)-Sapphire
resolves10.1063/1.4950867
Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition
resolves10.1063/1.4986478
Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants
resolves10.1016/j.jcrysgro.2016.04.022
Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air
resolves10.1088/0953-8984/19/34/346211
Structures and energetics of Ga<sub>2</sub>O<sub>3</sub>polymorphs
resolves10.1107/S0108270195016404
A Reinvestigation of β-Gallium Oxide
resolves10.1063/1.2053360
Oxygen vacancies in ZnO
resolves10.7567/JJAP.52.051101
Formation of Semi-Insulating Layers on Semiconducting β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by Thermal Oxidation
resolves10.1063/1.3499306
Oxygen vacancies and donor impurities in β-Ga2O3
resolves10.1063/1.371289
Role of oxygen vacancy defect states in the <i>n</i>-type conduction of β-Ga2O3
resolves10.1007/BF00324340
H2-induced changes in electrical conductance of ?-Ga2O3 thin-film systems
resolves10.1007/s002160050379
Decomposition of methane on polycrystalline thick films of Ga 2 O 3 investigated by thermal desorption spectroscopy with a mass spectrometer
resolves10.1016/S0925-4005(97)00334-1
CO-Sensor for domestic use based on high temperature stable Ga2O3 thin films
resolves10.1016/S0169-4332(01)00080-0
Ga2O3 thin film for oxygen sensor at high temperature
resolves10.1063/1.4916078
Anisotropic thermal conductivity in single crystal β-gallium oxide
resolves10.1088/0268-1242/30/2/024006
Temperature-dependent thermal conductivity in Mg-doped and undoped<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>bulk-crystals
resolves10.1063/1.4927742
Lattice thermal conductivity in β-Ga2O3 from first principles
resolves10.1063/1.4968550
Intrinsic electron mobility limits in <i>β</i>-Ga2O3
resolves10.7567/APEX.8.031101
High-mobility β-Ga<sub>2</sub>O<sub>3</sub>($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
resolves10.1088/1361-6463/aa7aff
State-of-the-art technologies of gallium oxide power devices
resolves10.1039/C6RA14010F
Electronic structure and optical property of metal-doped Ga <sub>2</sub> O <sub>3</sub> : a first principles study
resolves10.1002/pssb.201451551
Brillouin zone and band structure of β‐Ga<sub>2</sub>O<sub>3</sub>
resolves10.1002/aelm.v3.9
resolves10.1016/j.jcrysgro.2013.02.015
MBE grown Ga2O3 and its power device applications
resolves10.1063/1.4966999
Characterization of channel temperature in Ga2O3 metal-oxide-semiconductor field-effect transistors by electrical measurements and thermal modeling
resolves10.1109/LED.2016.2568139
3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\beta $ &lt;/tex-math&gt; &lt;/inline-formula&gt;-Ga<sub>2</sub>O<sub>3</sub>MOSFETs
resolves10.7567/APEX.10.041101
Enhancement-mode Ga<sub>2</sub>O<sub>3</sub> MOSFETs with Si-ion-implanted source and drain
resolves10.1109/LED.2017.2694805
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
resolves10.7567/APEX.10.051102
Delta-doped β-gallium oxide field-effect transistor
resolves10.1109/LED.2018.2805785
Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
resolves10.1063/1.4960651
Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors
resolves10.1063/1.5018238
High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate
resolves10.1063/1.5000735
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect
resolves10.1109/LED.2016.2609202
Al2O3/ $\beta $ -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing
resolves10.7567/JJAP.55.1202B5
Epitaxially grown crystalline Al<sub>2</sub>O<sub>3</sub> interlayer on β-Ga<sub>2</sub>O<sub>3</sub>(010) and its suppressed interface state density
resolves10.7567/JJAP.55.1202B6
Epitaxial growth and electric properties of γ-Al<sub>2</sub>O<sub>3</sub>(110) films on β-Ga<sub>2</sub>O<sub>3</sub>(010) substrates
resolves10.1109/LED.2016.2570521
Interface State Density in Atomic Layer Deposited SiO<sub>2</sub>/&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\beta $ &lt;/tex-math&gt; &lt;/inline-formula&gt;-Ga<sub>2</sub>O<sub>3</sub>(&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\bar {2}01$ &lt;/tex-math&gt; &lt;/inline-formula&gt;) MOSCAPs
resolves10.1063/1.4991400
Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations
resolves10.1063/1.5031183
C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) <i>β</i>-Ga2O3
resolves10.1109/LED.2018.2841899
Charge Trapping in Al<sub>2</sub>O<sub>3</sub>/$\beta$ -Ga<sub>2</sub>O<sub>3</sub>-Based MOS Capacitors
resolves10.1007/s11664-016-5121-1
Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties
resolves10.1063/1.4979789
High pulsed current density <i>β</i>-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
resolves10.7567/APEX.10.124201
Depletion-mode vertical Ga<sub>2</sub>O<sub>3</sub>trench MOSFETs fabricated using Ga<sub>2</sub>O<sub>3</sub>homoepitaxial films grown by halide vapor phase epitaxy
resolves10.1109/LED.2017.2675544
Ga<sub>2</sub>O<sub>3</sub>MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
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