Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 77 checked references that resolve
resolves10.1038/nnano.2012.193Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
resolves10.1038/nphys2942Spin and pseudospins in layered transition metal dichalcogenides
resolves10.1103/PhysRevLett.105.136805Atomically Thin
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">
<mml:msub>
<mml:mi>MoS</mml:mi>
<mml:mn>2</mml:mn>
</mml:msub>
</mml:math>
: A New Direct-Gap Semiconductor
resolves10.1021/nl2043612Growth of Large-Area and Highly Crystalline MoS<sub>2</sub> Thin Layers on Insulating Substrates
resolves10.1038/nnano.2013.277Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
resolves10.1002/smll.201102654Large‐Area Vapor‐Phase Growth and Characterization of MoS<sub>2</sub> Atomic Layers on a SiO<sub>2</sub> Substrate
resolves10.1038/nmat3633Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
resolves10.1038/nmat3673Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
resolves10.1103/PhysRevLett.113.066105Dense Network of One-Dimensional Midgap Metallic Modes in Monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>MoSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and Their Spatial Undulations
resolves10.1038/ncomms2498Electrical control of neutral and charged excitons in a monolayer semiconductor
resolves10.1103/PhysRevLett.111.216805Optical Spectrum of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>: Many-Body Effects and Diversity of Exciton States
resolves10.1103/PhysRevLett.113.076802Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevLett.113.026803Tightly Bound Excitons in Monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1021/nl501133cDirect Imaging of Band Profile in Single Layer MoS<sub>2</sub> on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending
resolves10.1038/nmat4061Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
resolves10.1103/PhysRevLett.108.196802Coupled Spin and Valley Physics in Monolayers of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>and Other Group-VI Dichalcogenides
resolves10.1038/ncomms1882Valley-selective circular dichroism of monolayer molybdenum disulphide
resolves10.1038/ncomms3053Magnetoelectric effects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers
resolves10.1038/nphys2848Spin–layer locking effects in optical orientation of exciton spin in bilayer WSe2
resolves10.1038/ncomms4876Dirac cones and Dirac saddle points of bright excitons in monolayer transition metal dichalcogenides
resolves10.1103/PhysRevLett.113.266804Valley Splitting and Polarization by the Zeeman Effect in Monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>MoSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1126/science.1258122Ultrafast generation of pseudo-magnetic field for valley excitons in WSe
<sub>2</sub>
monolayers
resolves10.1038/nnano.2014.26Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
resolves10.1038/nnano.2014.25Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide
resolves10.1103/PhysRevB.88.045416Monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>: Trigonal warping, the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Γ</mml:mi></mml:math>valley, and spin-orbit coupling effects
resolves10.1038/srep01608Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
resolves10.1103/PhysRevB.85.205302Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevB.86.241201Effects of confinement and environment on the electronic structure and exciton binding energy of MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>from first principles
resolves10.1103/PhysRevB.87.155304Quasiparticle band structures and optical properties of strained monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>and WS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1088/0022-3719/5/24/016Transmission spectra of some transition metal dichalcogenides. II. Group VIA: trigonal prismatic coordination
resolves10.1021/nl5021975Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide
resolves10.1103/PhysRevB.90.155449Nonlinear photoluminescence in atomically thin layered<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>arising from diffusion-assisted exciton-exciton annihilation
resolves10.1021/nn303973rExciton Dynamics in Suspended Monolayer and Few-Layer MoS<sub>2</sub> 2D Crystals
resolves10.1063/1.3636402Low-temperature photocarrier dynamics in monolayer MoS<sub>2</sub>
resolves10.1103/PhysRevB.89.125427Exciton-exciton annihilation in MoSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>monolayers
resolves10.1103/PhysRevB.86.081301Robust optical emission polarization in MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>monolayers through selective valley excitation
resolves10.1103/PhysRevB.90.075413Valley dynamics probed through charged and neutral exciton emission in monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi mathvariant="normal">WSe</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1021/nl403742jMany-Body Effects in Valleytronics: Direct Measurement of Valley Lifetimes in Single-Layer MoS<sub>2</sub>
resolves10.1021/nn405419hValley Carrier Dynamics in Monolayer Molybdenum Disulfide from Helicity-Resolved Ultrafast Pump–Probe Spectroscopy
resolves10.1103/PhysRevB.89.205303Valley depolarization due to intervalley and intravalley electron-hole exchange interactions in monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mtext>MoS</mml:mtext><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1021/nn500277yTransient Absorption Microscopy of Monolayer and Bulk WSe<sub>2</sub>
resolves10.1038/ncomms7242Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
resolves10.1021/nl501962cPhotovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
resolves10.1021/nl502075nElectroluminescence and Photocurrent Generation from Atomically Sharp WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction <i>p–n</i> Diodes
resolves10.1073/pnas.1405435111Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
resolves10.1038/ncomms5555High-temperature superfluidity with indirect excitons in van der Waals heterostructures
resolves10.1073/pnas.1406960111Anomalously robust valley polarization and valley coherence in bilayer WS
<sub>2</sub>
resolves10.1103/PhysRevB.90.041414Exciton valley relaxation in a single layer of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi mathvariant="normal">WS</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>measured by ultrafast spectroscopy
resolves10.1039/C4NR03607GValley and spin dynamics in MoSe
<sub>2</sub>
two-dimensional crystals
The 13 references without a DOI — listed, not checked
no DOI — not checkedElectronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
no DOI — not checkedExciton binding energy of monolayer WS2
no DOI — not checkedNon-linear optical spectroscopy of excited exciton states for efficient valley coherence generation in WSe2 monolayers
no DOI — not checkedValley Zeeman effect in elementary optical excitations of a monolayer WSe2
no DOI — not checkedBreaking of valley degeneracy by magnetic field in monolayer MoSe2
no DOI — not checkedValley-selective optical Stark effect in monolayer WS2
no DOI — not checkedValley-selective monolayer second-harmonic generation transistor
no DOI — not checkedDetermination of band alignment in transition metal dichalcogenides heterojunctions
no DOI — not checkedIntrinsic exciton linewidth in monolayer transition metal dichalcogenides
no DOI — not checkedRadiative lifetimes of excitons and trions in monolayers of metal dichalcogenide MoS2
no DOI — not checkedNanosecond relaxation times of excitonic states in monolayer MoSe2
no DOI — not checkedUltrafast terahertz probe of transient evolution of charged and neutral phase of photoexcited electron–hole gas in monolayer semiconductor
no DOI — not checkedFast exciton annihilation by capture of electrons or holes by defects via auger scattering in monolayer metal dichalcogenides
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