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Electronic entropy contribution to the metal insulator transition in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">VO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>

https://doi.org/10.1103/physrevb.102.165138
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31/31 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 31 checked references that resolve
resolves10.1103/PhysRevLett.3.34
Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature
resolves10.1038/40363
Current switching of resistive states in magnetoresistive manganites
resolves10.1038/s41467-017-02814-4
Tunable metal-insulator transition, Rashba effect and Weyl Fermions in a relativistic charge-ordered ferroelectric oxide
resolves10.1016/j.pmatsci.2009.05.002
Vibrational thermodynamics of materials
resolves10.1103/PhysRevB.99.064113
Origin of the transition entropy in vanadium dioxide
resolves10.1103/PhysRev.185.1022
Electronic Properties of V<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>near the Semiconductor-Metal Transition
resolves10.1021/nl902167b
Thermoelectric Effect across the Metal−Insulator Domain Walls in VO<sub>2</sub> Microbeams
resolves10.1143/JPSJ.21.2422
Hall Effect of Vanadium Dioxide Powder
resolves10.1103/PhysRevB.79.153107
Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition
resolves10.3891/acta.chem.scand.24-0420
A Refinement of the Structure of VO2.
resolves10.1016/0022-4596(77)90020-2
Structural aspects of the metal-insulator transitions in V0.985Al0.015O2
resolves10.1107/S0021889879012711
Accurate X-ray determination of the lattice parameters and the thermal expansion coefficients of VO<sub>2</sub>near the transition temperature
resolves10.1016/0038-1098(69)90888-6
Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature
resolves10.1063/1.1654062
Transport and Structural Properties of VO2 Films
resolves10.1103/RevModPhys.40.714
Mechanisms for Metal-Nonmental Transitions in Transition-Metal Oxides and Sulfides
resolves10.1016/0022-4596(71)90091-0
The two components of the crystallographic transition in VO2
resolves10.1016/0022-3697(78)90108-7
Experimental study of the electronic and lattice contributions to the VO2 transition
resolves10.1016/0025-5408(73)90039-1
Heat capacity of VO2 single crystals
resolves10.1021/nl101457k
Extended Mapping and Exploration of the Vanadium Dioxide Stress-Temperature Phase Diagram
resolves10.1103/PhysRevB.11.4383
Metal-insulator transition in vanadium dioxide
resolves10.1038/nature13865
Metallization of vanadium dioxide driven by large phonon entropy
resolves10.1103/PhysRev.73.1349
The Application of Onsager's Reciprocal Relations to Thermoelectric, Thermomagnetic, and Galvanomagnetic Effects
resolves10.1103/PhysRevA.30.2843
Relationship of thermoelectricity to electronic entropy
resolves10.1080/14786435.2016.1216657
Connecting electronic entropy to empirically accessible electronic properties in high temperature systems
resolves10.1080/14786435.2016.1269968
A thermodynamic basis for the electronic properties of molten semiconductors: the role of electronic entropy
resolves10.1038/nature01639
Spin entropy as the likely source of enhanced thermopower in NaxCo2O4
resolves10.1103/PhysRevB.10.1801
Dimerization of a linear Heisenberg chain in the insulating phases of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">V</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cr</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1016/S0022-3697(71)80172-5
Phase transitions and conductivity anomalies in solid solutions of VO2 with TiO2, NbO2, and MoO2
resolves10.1103/PhysRevLett.97.155704
Configurational Electronic Entropy and the Phase Diagram of Mixed-Valence Oxides: The Case of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Li</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>FePO</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevB.95.035113
Resolving the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>VO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math> controversy: Mott mechanism dominates the insulator-to-metal transition
resolves10.1103/PhysRevLett.94.026404
Dynamical Singlets and Correlation-Assisted Peierls Transition in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow><mml:mi mathvariant="normal">V</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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