Reference health

Site effect on the impurity levels in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mn>5</mml:mn><mml:mi>R</mml:mi></mml:math>SiC

https://doi.org/10.1103/physrevb.22.2842
CiteStamped reference-health badge
36/36 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

20 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 36 checked references that resolve
resolves10.1103/PhysRev.127.1878
Inequivalent Sites and Multiple Donor and Acceptor Levels in SiC Polytypes
resolves10.1016/0022-2313(79)90042-5
Site-dependent donor and acceptor levels in 6 H-SiC
resolves10.1016/0022-3697(77)90059-2
Photoluminescence spectra of Ga-doped and Al-doped 4H-SiC
resolves10.1149/1.2133274
Photoluminescence Due to Al, Ga, and B Acceptors in 4H‐, 6H‐, and 3 C  ‐ SiC Grown from a Si Melt
resolves10.1016/0022-2313(73)90032-X
Donor-acceptor pair spectra in 6H and 4H SiC doped with nitrogen and aluminium
resolves10.1063/1.322428
Liquid-phase epitaxial growth of 6H-SiC by the dipping technique for preparation of blue-light-emitting diodes
resolves10.1002/pssa.2210350103
Silicon carbide doped with gallium
resolves10.1063/1.1707837
Growth and Properties of β-SiC Single Crystals
resolves10.1002/pssa.2210370256
Donor-acceptor pair emission from β-sic doped with gallium
resolves10.1016/0022-3697(68)90156-X
Luminescence of the aluminium centre in cubic SiC: Dependence of the recombination rates on the intensity of the light excitation
resolves10.1002/pssa.2210300234
Free-to-bound transition in β-SiC doped with boron
resolves10.1103/PhysRev.123.813
Lattice Absorption Bands in SiC
resolves10.1103/PhysRev.173.787
Phonon Dispersion Curves by Raman Scattering in SiC, Polytypes<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>3</mml:mn><mml:mi>C</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mn>5</mml:mn><mml:mi>R</mml:mi></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>2</mml:mn><mml:mn>1</mml:mn><mml:mi>R</mml:mi></mml:math>
resolves10.1002/pssb.19700370222
Energy Band Structures of Four Polytypes of Silicon Carbide Calculated with the Empirical Pseudopotential Method
resolves10.1103/PhysRev.137.A1515
Luminescence of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>SiC, and Location of Conduction-Band Minima in SiC Polytypes
resolves10.1103/PhysRevB.5.2198
Kohn-Luttinger Interference Effect and Location of the Conduction-Band Minima in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mi> </mml:mi><mml:mi mathvariant="normal">SiC</mml:mi></mml:math>
resolves10.1103/PhysRev.141.742
Free-to-Bound and Bound-to-Bound Transitions in CdS
resolves10.1103/PhysRev.132.2023
Optical Properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mn>5</mml:mn><mml:mi>R</mml:mi></mml:math>SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption
resolves10.1002/pssa.2210580242
Free exciton luminescence in 3C, 4H, 6H, and 15R SiC
resolves10.1103/PhysRev.91.265
Absorption of Light by Trapped Electrons
resolves10.1103/PhysRev.140.A601
Shapes of Impurity Absorption Bands in Solids
resolves10.1143/JJAP.13.812
Shapes of Pair Emission Bands in GaP: Ge
resolves10.1002/pssb.2220660114
On the Spectral Intensity Distribution of Donor–Acceptor Pair Recombination in GaP
resolves10.1016/0022-3697(63)90046-5
On the electronic conduction of α-SiC crystals between 300 and 1500°K
resolves10.1364/AO.10.001034
Refractive Index, Dispersion, and Birefringence of Silicon Carbide Polytypes
resolves10.1103/PhysRevB.2.2255
Static Dielectric Constant of SiC
resolves10.1016/0022-3697(67)90184-9
Application of quantum defect techniques to photoionization of impurities in semiconductors
resolves10.1103/PhysRev.185.1116
Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in Semiconductors
resolves10.1364/JOSA.62.000341
Refractive Index and Birefringence of 2H Silicon Carbide
resolves10.1016/0022-2313(77)90030-8
The location and shape of the conduction band minima in cubic silicon carbide
resolves10.1103/PhysRev.133.A1163
Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption
resolves10.1103/PhysRev.127.1868
Exciton Recombination Radiation and Phonon Spectrum of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>SiC
resolves10.1103/PhysRevLett.4.361
Experimental Proof of the Existence of a New Electronic Complex in Silicon
resolves10.1103/PhysRev.139.A1262
Exciton Complexes and Donor Sites in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>3</mml:mn><mml:mn>3</mml:mn><mml:mi>R</mml:mi></mml:math>SiC
resolves10.1016/0038-1098(79)90330-2
Ground state energies of bound exciton for all mass ratios
resolves10.1103/PhysRev.159.649
Exciton-Donor Complexes in Semiconductors
The 20 references without a DOI — listed, not checked
no DOI — not checkedPhysRevB.22.2842Cc3R1
no DOI — not checkedPhysRevB.22.2842Cc7R1
no DOI — not checkedPhysRevB.22.2842Cc8R1
no DOI — not checkedPhysRevB.22.2842Cc9R1
no DOI — not checkedSilicon Carbide—1973
no DOI — not checkedPhysRevB.22.2842Cc11R1
no DOI — not checkedPhysRevB.22.2842Cc13R1
no DOI — not checkedPhysRevB.22.2842Cc17R1
no DOI — not checkedSilicon Carbide—1973
no DOI — not checkedPhysRevB.22.2842Cc28R1
no DOI — not checkedPhysRevB.22.2842Cc29R1
no DOI — not checkedPhysRevB.22.2842Cc30R1
no DOI — not checkedPhysRevB.22.2842Cc31R1
no DOI — not checkedPhysRevB.22.2842Cc32R1
no DOI — not checkedDynamic Processes in Solid State Optics
no DOI — not checkedPhysRevB.22.2842Cc39R2
no DOI — not checkedElectroluminescence
no DOI — not checkedPhysRevB.22.2842Cc42R1
no DOI — not checkedPhysRevB.22.2842Cc43R1
no DOI — not checkedSilicon Carbide—1973
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

view as graph · paper page

Embed this badge

Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.

<a href="https://citestamp.com/citestamped/10.1103/physrevb.22.2842"><img src="https://citestamp.com/citestamped/10.1103/physrevb.22.2842/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[![CiteStamped reference-health badge](https://citestamp.com/citestamped/10.1103/physrevb.22.2842/badge.svg)](https://citestamp.com/citestamped/10.1103/physrevb.22.2842)