Reference health

Persistent photoconductivity at elevated temperatures in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">Te</mml:mi><mml:mo>:</mml:mo><mml:mi mathvariant="normal">In</mml:mi></mml:math>

https://doi.org/10.1103/physrevb.56.6689
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23/23 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

6 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 23 checked references that resolve
resolves10.1016/0038-1098(92)90331-3
Band tails and the insulator-metal transition in the persistent photoconductor Cd1-xMnxTe:In
resolves10.1103/PhysRevB.47.12540
Persistent photoconductivity and photoionization of deep electron traps in Ga-doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Te
resolves10.1063/1.322732
Persistent photoconductivity in donor-doped Cd1−<i>x</i>Zn<i>x</i>Te
resolves10.1103/PhysRevB.40.6304
Lattice relaxation of<i>DX</i>-like donors in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Zn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Te
resolves10.1016/0038-1098(72)90604-7
Non-Γ donor levels and kinetics of electron transfer in n-type CdTe
resolves10.1063/1.345628
Deep donor levels (<i>D</i> <i>X</i> centers) in III-V semiconductors
resolves10.1103/PhysRevLett.61.873
Theory of the Atomic and Electronic Structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>DX</mml:mi></mml:math>Centers in GaAs and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>Alloys
resolves10.1103/PhysRevB.39.10063
Energetics of<i>DX</i>-center formation in GaAs and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As alloys
resolves10.1063/1.113001
Writing erasable metallic patterns in insulating Al<i>x</i>Ga1−<i>x</i>As:<i>DX</i>
resolves10.1063/1.113057
Diffraction from optically written persistent plasma gratings in doped compound semiconductors
resolves10.1016/0022-0248(95)00681-8
DX centres in CdZnTe:Cl and their applications
resolves10.1063/1.359648
Persistent photoconductivity and <i>DX</i> centers in Cd0.8Zn0.2Te:Cl
resolves10.1103/PhysRevLett.56.2419
Metal-Insulator Transition in Semimagnetic Semiconductors
resolves10.1103/PhysRevB.41.5931
Magnetoresistance and Hall effect near the metal-insulator transition of<i>n</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>0.95</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mn>0.05</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Te
resolves10.1103/PhysRevB.34.4187
Magnetoresistance and Hall effect near the metal-insulator transition of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Se
resolves10.1063/1.102630
Effects of the local environment on the properties of <i>D</i> <i>X</i> centers in Si-doped GaAs and dilute Al<i>x</i>Ga1−<i>x</i>As alloys
resolves10.1088/0268-1242/6/10B/011
Local-environment dependence of the DX centre in GaAlAs: alloy and superlattice studies
resolves10.1088/0268-1242/7/10/005
The effect of local symmetry on the energetic position of DX centres in (Al<sub>x</sub>Ga<sub>1-x</sub>)As and Ga(As<sub>1-x</sub>P<sub>x</sub>) alloys
resolves10.1007/BF02651962
Effect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs
resolves10.1063/1.360100
Structure of the <i>DX</i> state formed by donors in (Al,Ga)As and Ga(As,P)
resolves10.1103/PhysRevB.33.4027
Decay kinetics of persistent photoconductivity in semiconductors
resolves10.1103/PhysRevB.41.5178
Relaxation of stored charge carriers in a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Zn</mml:mi></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Se mixed crystal
resolves10.1103/PhysRevLett.64.2547
Percolation transition of persistent photoconductivity in II-VI mixed crystals
The 6 references without a DOI — listed, not checked
no DOI — not checkedPhysRevB.56.6689Cc11R1
no DOI — not checkedAnderson Localization
no DOI — not checkedConduction in Non-Crystalline Materials
no DOI — not checkedLocalization and Metal-Insulator Transitions
no DOI — not checkedHeterostructure Lasers
no DOI — not checkedPhysRevB.56.6689Cc28R1
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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