Reference health
Electronic and structural properties of SnO under pressure
40/40 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
6 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 40 checked references that resolve
resolves10.1002/pssb.200405231
Structural properties, infrared reflectivity, and Raman modes of SnO at high pressure
resolves10.1016/0040-6090(84)90303-1
SnO films and their oxidation to SnO2: Raman scattering, IR reflectivity and X-ray diffraction studies
resolves10.1016/0013-4686(96)00004-7
Selection of optimal mixing ratios to obtain suitable photoelectrodes from mixed semiconductors using band gap calculations
resolves10.1103/PhysRevB.48.15712
Calculated static and dynamic properties of β-Sn and Sn-O compounds
resolves10.1016/S1293-2558(02)01280-3
An ab-initio study of the rôle of lone pairs in the structure and insulator–metal transition in SnO and PbO
resolves10.1103/PhysRevB.64.045119
<i>Ab initio</i>pseudopotential calculation of the equilibrium structure of tin monoxide
resolves10.1103/PhysRevB.52.11690
Electronic structure of the lead monoxides: Band-structure calculations and photoelectron spectra
resolves10.1103/PhysRevB.59.8481
<i>Ab initio</i>calculation of the origin of the distortion of α-PbO
resolves10.1103/PhysRev.140.A1133
Self-Consistent Equations Including Exchange and Correlation Effects
resolves10.1103/PhysRevB.23.5048
Self-interaction correction to density-functional approximations for many-electron systems
resolves10.1103/PhysRevB.45.13244
Accurate and simple analytic representation of the electron-gas correlation energy
resolves10.1103/PhysRevB.46.6671
Atoms, molecules, solids, and surfaces: Applications of the generalized gradient approximation for exchange and correlation
resolves10.1103/PhysRevB.58.11959
Applications of the generalized gradient approximation to ferroelectric perovskites
resolves10.1088/0953-8984/13/42/307
Degree of localization of the exchange-correlation hole and its influence on the ground-state (structural and magnetic) properties of d metals
resolves10.1103/PhysRevB.38.1537
Elastic constants and phonon frequencies of Si calculated by a fast full-potential linear-muffin-tin-orbital method
resolves10.1103/PhysRevB.40.2009
Fast full-potential calculations with a converged basis of atom-centered linear muffin-tin orbitals: Structural and dynamic properties of silicon
resolves10.1103/PhysRevB.43.6388
Ground-state properties of lanthanum: Treatment of extended-core states
resolves10.1038/371683a0
Classification of chemical bonds based on topological analysis of electron localization functions
resolves10.1002/pssb.2220540211
On the Numerical Calculation of the Density of States and Related Properties
resolves10.1103/PhysRevLett.75.1642
Conversion Electron Mössbauer Spectroscopy Study of Epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">FeSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Grown by Molecular Beam Epitaxy
resolves10.1103/PhysRevB.27.4013
Mössbauer lattice temperature of tetragonal (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mfrac><mml:mrow><mml:mi>P</mml:mi><mml:mn>4</mml:mn><mml:mn/></mml:mrow><mml:mrow><mml:mi>nmm</mml:mi></mml:mrow></mml:mfrac></mml:math>) SnO
resolves10.1103/PhysRevB.60.14496
Linear augmented-plane-wave frozen-phonon calculation, shell-model lattice dynamics, and specific-heat measurement of SnO
resolves10.1103/PhysRevB.54.7151
Shell-model lattice dynamics and Mössbauer recoilless fraction of SnO
resolves10.1103/PhysRevB.34.5977
First-principles theory of tetrahedral bonding and crystal structure of lead
The 6 references without a DOI — listed, not checked
no DOI — not checkedCrystal Structures
no DOI — not checkedPhysRevB.72.014109Cc2R1
no DOI — not checkedPhysRevB.72.014109Cc3R1
no DOI — not checkedHigh Pressure in Semiconductor Physics I
no DOI — not checkedPhysRevB.72.014109Cc34R1
no DOI — not checkedRelativistic Electronic Structure Theory
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work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
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