Reference health

Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

https://doi.org/10.1103/physrevb.83.235313
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26/26 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

11 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 26 checked references that resolve
resolves10.1038/nmat2373
Conduction at domain walls in oxide multiferroics
resolves10.1080/00150190600888603
Domain Engineering in Lithium Niobate and Lithium Tantalate: Domain Wall Motion
resolves10.1063/1.1329327
Formation and evolution of charged domain walls in congruent lithium niobate
resolves10.1080/00150193.2010.489810
Raman Study of Neutral and Charged Domain Walls in Lithium Niobate
resolves10.1103/PhysRevLett.82.4106
Direct Observation of Pinning and Bowing of a Single Ferroelectric Domain Wall
resolves10.1063/1.1635961
High-speed switching of nanoscale ferroelectric domains in congruent single-crystal LiTaO3
resolves10.1016/S0009-2614(03)01190-4
Nanoscale domain switching at crystal surfaces of lithium niobate
resolves10.1088/0957-4484/17/7/S06
Nanodomain manipulation for ultrahigh density ferroelectric data storage
resolves10.1063/1.2140894
Realization of 10Tbit∕in.2 memory density and subnanosecond domain switching time in ferroelectric data storage
resolves10.1103/PhysRevLett.90.107601
Ferroelectric Domain Breakdown
resolves10.1063/1.2197264
Dynamics of ferroelectric domain growth in the field of atomic force microscope
resolves10.1063/1.366782
Wall velocities, switching times, and the stabilization mechanism of 180° domains in congruent LiTaO3 crystals
resolves10.1103/PhysRevB.75.094110
Pressure on charged domain walls and additional imprint mechanism in ferroelectrics
resolves10.1103/PhysRevB.83.184104
Head-to-head and tail-to-tail<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mn>180</mml:mn><mml:mrow><mml:mo>°</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>domain walls in an isolated ferroelectric
resolves10.1063/1.2337009
Interface-induced phenomena in polarization response of ferroelectric thin films
resolves10.1007/s00339-007-4355-4
Depolarization in modeling nano-scale ferroelectrics using the Landau free energy functional
resolves10.1103/PhysRev.135.A748
Dielectric Constant in Paraelectric Perovskites
resolves10.1103/PhysRevB.64.054415
Coupling between magnetism and dielectric properties in quantum paraelectric<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">EuTiO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevB.71.184110
Phenomenological theory of a single domain wall in uniaxial trigonal ferroelectrics: Lithium niobate and lithium tantalate
resolves10.1103/PhysRev.155.539
Paraelectric-Ferroelectric Phase Boundaries in Semiconducting Perovskite-Type Crystals
resolves10.1007/BF01540113
Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K
resolves10.1063/1.362796
Electronic transport properties of Sr1−<i>x</i>La<i>x</i>TiO3 ceramics
resolves10.1016/j.jpcs.2004.06.010
Ferroelectric phase transition in Ga2Te3 single crystals
resolves10.1103/PhysRevB.78.174103
Stability of intrinsic defects and defect clusters in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Li</mml:mi><mml:mi mathvariant="normal">Nb</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>from density functional theory calculations
resolves10.1103/PhysRevB.80.144104
Structure and energetics of Er defects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>LiNbO</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>from first-principles and thermodynamic calculations
resolves10.1103/PhysRevB.82.184109
Stability and charge transfer levels of extrinsic defects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>LiNbO</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
The 11 references without a DOI — listed, not checked
no DOI — not checkedNucleation Theory and Applications
no DOI — not checkedPhysRevB.83.235313Cc12R1
no DOI — not checkedPhysRevB.83.235313Cc15R1
no DOI — not checkedPhysRevB.83.235313Cc15R2
no DOI — not checkedPhysRevB.83.235313Cc16R1
no DOI — not checkedPhysRevB.83.235313Cc16R2
no DOI — not checkedFerroelectrics Semiconductors
no DOI — not checked18th IEEE International Symposium on the Applications of Ferroelectrics, 2009, ISAF 2009
no DOI — not checkedSolid State Physics
no DOI — not checkedPhysics of Semiconductor Devices
no DOI — not checkedIntroduction to Semiconductor Theory
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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