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Near valence-band electronic properties of semiconducting<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:msub><mml:mrow><mml:mo>−</mml:mo><mml:mi>Ga</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>(100) single crystals
37/37 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 37 checked references that resolve
resolves10.1063/1.119233
Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
resolves10.1063/1.3147197
Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing
resolves10.1063/1.3574911
Solar-blind photodiodes composed of a Au Schottky contact and a β-Ga2O3 single crystal with a high resistivity cap layer
resolves10.1063/1.3674287
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
resolves10.1103/PhysRevB.37.785
Development of the Colle-Salvetti correlation-energy formula into a functional of the electron density
resolves10.1103/PhysRevB.74.195123
First-principles study of the structural, electronic, and optical properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>in its monoclinic and hexagonal phases
resolves10.1088/1757-899X/34/1/012002
Resonant Photoemission at the O1s threshold to characterize β-Ga<sub>2</sub>O<sub>3</sub>single crystals
resolves10.1088/1367-2630/13/8/085014
Experimental electronic structure of In<sub>2</sub>O<sub>3</sub>and Ga<sub>2</sub>O<sub>3</sub>
resolves10.1002/crat.201000341
Czochralski growth and characterization of β‐Ga<sub>2</sub>O<sub>3</sub> single crystals
resolves10.1016/j.jcrysgro.2014.07.021
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
resolves10.1016/j.apsusc.2015.04.225
Surface properties of annealed semiconducting β-Ga2O3 (1 0 0) single crystals for epitaxy
resolves10.1103/PhysRevB.72.085108
Functional designed to include surface effects in self-consistent density functional theory
resolves10.1103/PhysRevB.59.1758
From ultrasoft pseudopotentials to the projector augmented-wave method
resolves10.1016/0927-0256(96)00008-0
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
resolves10.1103/PhysRevB.54.11169
Efficient iterative schemes for<i>ab initio</i>total-energy calculations using a plane-wave basis set
resolves10.1088/0953-8984/2/19/007
Finite basis set corrections to total energy pseudopotential calculations
resolves10.1103/PhysRev.139.A796
New Method for Calculating the One-Particle Green's Function with Application to the Electron-Gas Problem
resolves10.1103/RevModPhys.74.601
Electronic excitations: density-functional versus many-body Green’s-function approaches
resolves10.1103/PhysRevB.59.5521
Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation
resolves10.1103/PhysRevB.76.115109
Quasiparticle band structure based on a generalized Kohn-Sham scheme
resolves10.1103/PhysRevLett.105.146401
Quasiparticle Band Gap of ZnO: High Accuracy from the Conventional<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msup><mml:mi>G</mml:mi><mml:mn>0</mml:mn></mml:msup><mml:msup><mml:mi>W</mml:mi><mml:mn>0</mml:mn></mml:msup></mml:math>Approach
resolves10.1063/1.3086392
Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)
resolves10.1103/PhysRevB.81.075211
Bulk transport measurements in ZnO: The effect of surface electron layers
resolves10.1063/1.3642962
Electrical properties of <i>β</i>-Ga2O3 single crystals grown by the Czochralski method
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