Reference health
Migration mechanisms and diffusion barriers of vacancies in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
61/61 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 61 checked references that resolve
resolves10.1088/0953-8984/19/34/346211
Structures and energetics of Ga<sub>2</sub>O<sub>3</sub>polymorphs
resolves10.1016/S0925-4005(01)00813-9
On the mechanism of hydrogen sensing with SiO2 modificated high temperature Ga2O3 sensors
resolves10.1063/1.119233
Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
resolves10.1016/j.tsf.2006.12.125
Recent progress in transparent oxide semiconductors: Materials and device application
resolves10.1103/PhysRevB.74.195123
First-principles study of the structural, electronic, and optical properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>in its monoclinic and hexagonal phases
resolves10.1088/1367-2630/13/8/085014
Experimental electronic structure of In<sub>2</sub>O<sub>3</sub>and Ga<sub>2</sub>O<sub>3</sub>
resolves10.1002/pssa.201330025
Control of the conductivity of Si‐doped β‐<scp>G</scp>a<sub>2</sub><scp>O</scp><sub>3</sub> thin films via growth temperature and pressure
resolves10.1103/PhysRevB.47.15023
Magnetic bistability and Overhauser shift of conduction electrons in gallium oxide
resolves10.1016/j.jallcom.2016.06.274
Catalytic growth and characterization of single crystalline Zn doped p-type β-Ga2O3 nanowires
resolves10.1143/JJAP.13.1578
Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga<sub>2</sub>O<sub>3</sub>
resolves10.1088/0268-1242/30/2/024010
Bethe–Salpeter calculation of optical-absorption spectra of In<sub>2</sub>O<sub>3</sub>and Ga<sub>2</sub>O<sub>3</sub>
resolves10.1088/0953-8984/28/22/224005
Theoretical and experimental investigation of optical absorption anisotropy in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>
resolves10.1063/1.4816759
Correlation between blue luminescence intensity and resistivity in <i>β</i>-Ga2O3 single crystals
resolves10.1016/0022-4596(78)90017-8
Some observations on the photoluminescence of doped β-galliumsesquioxide
resolves10.1103/PhysRevB.87.235206
<i>Ab initio</i>calculations on the defect structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi></mml:math>-Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>O<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>3</mml:mn></mml:msub></mml:math>
resolves10.1063/1.2800792
Lattice dynamical, dielectric, and thermodynamic properties of β-Ga2O3 from first principles
resolves10.1103/PhysRevB.85.081109
Role of self-trapping in luminescence and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type conductivity of wide-band-gap oxides
resolves10.1103/PhysRevB.72.184103
Energetics and migration of point defects in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRev.140.A1133
Self-Consistent Equations Including Exchange and Correlation Effects
resolves10.1103/PhysRevB.59.1758
From ultrasoft pseudopotentials to the projector augmented-wave method
resolves10.1103/PhysRevB.54.11169
Efficient iterative schemes for<i>ab initio</i>total-energy calculations using a plane-wave basis set
resolves10.1063/1.1323224
Improved tangent estimate in the nudged elastic band method for finding minimum energy paths and saddle points
resolves10.1063/1.1329672
A climbing image nudged elastic band method for finding saddle points and minimum energy paths
resolves10.1063/1.480097
A dimer method for finding saddle points on high dimensional potential surfaces using only first derivatives
resolves10.1063/1.1682673
First-principles calculations for defects and impurities: Applications to III-nitrides
resolves10.1103/PhysRevLett.102.016402
Fully<i>Ab Initio</i>Finite-Size Corrections for Charged-Defect Supercell Calculations
resolves10.1103/PhysRevB.93.245201
Migration mechanisms and diffusion barriers of carbon and native point defects in GaN
resolves10.1016/0022-3697(57)90059-8
Frequency factors and isotope effects in solid state rate processes
resolves10.1002/pssa.201330092
Homoepitaxial growth of β‐Ga<sub>2</sub>O<sub>3</sub> layers by metal‐organic vapor phase epitaxy
resolves10.1063/1.4890524
Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in <i>β-</i>Ga2O3 solar-blind ultraviolet photodetectors
resolves10.1007/s10853-015-9693-6
Semiconducting Sn-doped β-Ga2O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy
resolves10.1103/PhysRevB.84.214109
Room-temperature diffusive phenomena in semiconductors: The case of AlGaN
resolves10.1103/PhysRevB.69.045208
Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance
resolves10.1103/PhysRevLett.81.2084
Optically Induced Migration of Interstitial Zinc in ZnSe: Caught in the Act
The 1 reference without a DOI — listed, not checked
no DOI — not checkedClassical and Quantum Dynamics in Condensed Phase Simulations
What this badge says. CiteStamped means the CHECKABLE references of this
work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record
Embed this badge
Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.
<a href="https://citestamp.com/citestamped/10.1103/physrevb.95.245202"><img src="https://citestamp.com/citestamped/10.1103/physrevb.95.245202/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[](https://citestamp.com/citestamped/10.1103/physrevb.95.245202)