Reference health
A comparative study of advanced MOSFET concepts
22/22 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
11 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 22 checked references that resolve
resolves10.1109/IEDM.1993.347385
Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions
resolves10.1109/16.127489
A high-performance 0.25- mu m CMOS technology. I. Design and characterization
resolves10.1109/IEDM.1989.74182
A fully depleted lean-channel transistor (DELTA)-a novel vertical ultra thin SOI MOSFET
resolves10.1109/4.400426
1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS
resolves10.1109/4.245593
Switched-source-impedance CMOS circuit for low standby subthreshold current giga-scale LSI's
resolves10.7567/JJAPS.22S1.267
A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET)
resolves10.1109/16.293306
Scaling the MOS transistor below 0.1 μm: methodology, device structures, and technology requirements
resolves10.1109/55.320976
Ultrafast operation of V/sub th/-adjusted p/sup +/-n/sup +/ double-gate SOI MOSFET's
resolves10.1109/101.268860
1-V microsystems/spl minus/scaling on schedule for personal communications
resolves10.1109/VTSA.1995.524654
Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications
resolves10.1109/VLSIT.1994.324400
Implications of fundamental threshold voltage variations for high-density SRAM and logic circuits
resolves10.1109/VLSIT.1993.760235
Experimental Study Of Threshold Voltage Fluctuations Using An 8k MOSFET's Array
resolves10.1109/IEDM.1993.347215
Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 μm MOSFET's
resolves10.1109/VTSA.1995.524700
Si-MOSFET scaling down to deep-sub-0.1-micron range and future of silicon LSI
The 11 references without a DOI — listed, not checked
no DOI — not checkedsymmetric cmos in fully-depleted silicon-on-insulator using p<formula><tex>$^+$</tex></formula> polycrystalline si-ge gate electrode
no DOI — not checkedshort-channel effects in deep-submicrometer soi mosfet's
no DOI — not checkeda surrounding-gate transistor (sgt) cell for 64/256 mbit dram's
no DOI — not checkedref16
no DOI — not checkedref18
no DOI — not checked0.1 <formula><tex>$\mu$</tex></formula>m delta-doped mosfet using post-energy implanting selective epitaxy
no DOI — not checkedhigh performance 0.1 <formula><tex>$\mu$</tex></formula>m cmos devices with 1.5 v power supply
no DOI — not checkeda study of design/process dependence of 0.25 <formula><tex>$\mu$</tex></formula>m gate length cmos for improved performance and reliability
no DOI — not checkeda dynamic-threshold mosfet for ultra-low voltage operation
no DOI — not checkeda 0.1 <formula><tex>$\mu$</tex></formula>m cmos technology with tilt-implanted punchthrough stopper (tips)
no DOI — not checkedref21
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