Reference health

Generalized gradual channel modeling of field-effect transistors

https://doi.org/10.1109/16.8806
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47/47 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

18 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 47 checked references that resolve
resolves10.1109/T-ED.1985.22268
An investigation of the MESFET "End" resistance using a distributed diode/resistance model
resolves10.1109/T-ED.1975.18118
Field distribution in junction field-effect transistors at large drain voltages
resolves10.1109/T-ED.1987.23195
GaAs MESFET simulation using PISCES with field-dependent mobility-diffusivity relation
resolves10.1049/el:19700343
Two-dimensional analysis of substrate effects in junction f.e.t.s
resolves10.1016/0038-1101(69)90112-9
General theory for pinched operation of the junction-gate FET
resolves10.1109/T-ED.1987.22902
GaAs FET device and circuit simulation in SPICE
resolves10.1109/T-ED.1970.16936
An analysis of current saturation mechanism of junction field-effect transistors
resolves10.1109/JRPROC.1953.274285
Unipolar "Field-Effect" Transistor
resolves10.1109/T-ED.1979.19451
Physical basis of short-channel MESFET operation
resolves10.1109/T-ED.1985.22060
A SPICE modeling technique for GaAs MESFET IC's
resolves10.1109/T-ED.1979.19401
A device model for an ion-implanted MESFET
resolves10.1109/T-ED.1978.19145
Analytical model of GaAs MESFET's
resolves10.1109/T-ED.1970.16921
Transport equations for electrons in two-valley semiconductors
resolves10.1109/T-ED.1978.19144
Current-voltage characteristics, small-signal parameters, and switching times of GaAs FET's
resolves10.1109/T-ED.1970.17132
Differential drain resistance of field-effect transistors beyond pinch-off: A comparison between theory and experiment
resolves10.1016/0038-1101(83)90016-3
Effects of velocity overshoot on performance of GaAs devices, with design information
resolves10.1109/JRPROC.1952.273964
A Unipolar "Field-Effect" Transistor
resolves10.1109/T-ED.1983.21439
New modeling of GaAs MESFET's
resolves10.1109/T-ED.1966.15631
Nonlinear space-charge domain dynamics in a semiconductor with negative differential mobility
resolves10.1049/el:19760475
Analysis of field distributions in a GaAs m.e.s.f.e.t. at large drain voltages
resolves10.1016/0038-1101(70)90175-9
Voltage-current characteristics of GaAs J-FET's in the hot electron range
resolves10.1109/T-ED.1963.15076
Analysis of field effect transistors with arbitrary charge distribution
resolves10.1109/T-ED.1987.23186
A unified physical DC and AC MESFET model for circuit simulation and device modeling
resolves10.1109/T-ED.1987.23036
GaAs MESFET interface considerations
resolves10.1049/el:19710490
Two-dimensional analysis of j.f.e.t. structures containing a low-conductivity substrate
resolves10.1147/rd.142.0095
Computer Aided Two-dimensional Analysis of the Junction Field-effect Transistor
resolves10.1109/TMTT.1976.1128845
Microwave Field-Effect Transistors - 1976
resolves10.1016/0038-1101(72)90129-3
A two-dimensional analysis of gallium arsenide junction field effect transistors with long and short channels
resolves10.1016/0038-1101(82)90113-7
An accurate JFET/MESFET model for circuit analysis
resolves10.1016/S0065-2539(08)60225-5
Current Saturation Mechanisms in Junction Field-Effect Transistors
resolves10.1109/IREPGED.1953.6811074
Joining solutions at the pinch-off point in “field-effect” transistor
resolves10.1143/JJAP.21.L77
Theoretical Calculation of Normally-Off GaAs MESFET Characteristics Including Effects of Surface Depletion Layer
resolves10.1016/0038-1101(73)90206-2
On the validity of the gradual channel approximation for junction field effect transistors with drift velocity saturation
resolves10.1016/0038-1101(67)90139-6
Characteristics of junction field effect devices with small channel length-to-width ratios
resolves10.1109/T-ED.1972.17420
Threshold voltages of normally off MESFET's
resolves10.1109/T-ED.1985.22058
Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's
resolves10.1109/PROC.1965.4385
Field-dependent mobility analysis of the field-effect transistor
resolves10.1109/TMTT.1980.1130099
A MESFET Model for Use in the Design of GaAs Integrated Circuits
resolves10.1109/T-ED.1982.20834
Backgating in GaAs MESFET's
resolves10.1016/0038-1101(67)90141-4
Current saturation and drain conductance of junction-gate field-effect transistors
resolves10.1109/T-ED.1987.23034
Quasi-two-dimensional modeling of GaAs MESFET's
resolves10.1016/S0065-2539(08)61205-6
Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors
resolves10.1109/T-ED.1973.17606
A two-dimensional numerical FET model for DC, AC, and large-signal analysis
resolves10.1049/el:19720188
Computer study of submicrometre f.e.t.s
resolves10.1109/PROC.1966.5004
The effect of the field-dependent mobility on field-effect transistor characteristics
resolves10.1109/T-ED.1981.20447
Influence of the surface and the episubstrate interface on the drain current drift of GaAs MESFET's
resolves10.1109/T-ED.1982.20816
Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's
The 18 references without a DOI — listed, not checked
no DOI — not checkedImplications of carrier velocity saturation in a gallium-arsenide field-effect transistor
no DOI — not checkedref48s
no DOI — not checkedref5s
no DOI — not checkedA three-section model for computing I-V characteristics of GaAs MESFET's
no DOI — not checkedHigh-frequency conductivity, carrier waves, and acoustic amplification in drifted semiconductor plasmas
no DOI — not checkedCurrent-voltage characteristics of the junction-gate field-effect transistor with field-dependent mobility
no DOI — not checkedDrain saturation current of junction field-effect transistor and potential, field and carrier distribution in the channel
no DOI — not checkedA three-section model for computing I-V characteristics of GaAs MESFET's
no DOI — not checkedDrain saturation current of junction field-effect transistor and potential, field and carrier distribution in the channel
no DOI — not checkedImplications of carrier velocity saturation in a gallium-arsenide field-effect transistor
no DOI — not checkedref6
no DOI — not checkedref5
no DOI — not checkedref44s
no DOI — not checkedref6s
no DOI — not checkedref49s
no DOI — not checkedAn efficient pseudo-two-dimensional simulation of MESFET operation
no DOI — not checkedGaAs FET modeling
no DOI — not checkedCurrent-voltage characteristics of the junction-gate field-effect transistor with field-dependent mobility
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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