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Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

https://doi.org/10.1109/led.2011.2167125
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11/11 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 11 checked references that resolve
resolves10.1109/TED.2010.2064316
High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors
resolves10.1002/pssa.201000976
Over 1.0 kV GaN <i>p</i>–<i>n</i> junction diodes on free‐standing GaN substrates
resolves10.1063/1.2001738
Growth and characterization of GaN PiN rectifiers on free-standing GaN
resolves10.1063/1.125080
Electrical effects of plasma damage in p-GaN
resolves10.1049/el:20001329
High-voltage GaN <i>pin</i> vertical rectifierswith 2 µm thick <i>i</i> -Layer
resolves10.1007/s11664-000-0059-7
Plasma damage in p-GaN
resolves10.1016/j.jcrysgro.2007.10.014
Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method
resolves10.1143/JJAP.42.L1
Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
resolves10.1016/j.jcrysgro.2006.10.246
High-breakdown-voltage pn-junction diodes on GaN substrates
resolves10.1109/TED.2011.2145380
Numerical Analysis of Forward-Current/Voltage Characteristics of Vertical GaN Schottky-Barrier Diodes and p-n Diodes on Free-Standing GaN Substrates
resolves10.1049/el:20062261
High performance GaN <i>pin</i> rectifiers grown on free-standing GaN substrates
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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