Reference health
Very Low-Programming-Current RRAM With Self-Rectifying Characteristics
21/21 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 21 checked references that resolve
resolves10.1109/LED.2013.2293591
Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications
resolves10.1109/TED.2014.2310200
Crossbar RRAM Arrays: Selector Device Requirements During Read Operation
resolves10.1109/LED.2015.2427313
On the Optimal ON/OFF Resistance Ratio for Resistive Switching Element in One-Selector One-Resistor Crosspoint Arrays
resolves10.1109/LED.2013.2294375
Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current
resolves10.1109/IEDM.2010.5703389
9nm half-pitch functional resistive memory cell with &#38;#60;1&#x00B5;A programming current using thermally oxidized sub-stoichiometric WO<inf>x</inf> film
resolves10.1109/IEDM.2012.6479084
A non-linear ReRAM cell with sub-1&#x03BC;A ultralow operating current for high density vertical resistive memory (VRRAM)
resolves10.1109/VTSA.2010.5488916
Ultra-low power Al<inf>2</inf>O<inf>3</inf>-based RRAM with 1&#x03BC;A reset current
resolves10.1109/LED.2014.2363618
Ultralow Sub-1-nA Operating Current Resistive Memory With Intrinsic Non-Linear Characteristics
resolves10.1109/VLSIT.2012.6242508
Ultrathin (&amp;lt;10nm) Nb<inf>2</inf>O<inf>5</inf>/NbO<inf>2</inf> hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
resolves10.1109/VLSIT.2014.6894437
A fast and low-voltage Cu complementary-atom-switch 1Mb array with high-temperature retention
resolves10.1109/LED.2011.2163697
Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications
resolves10.1109/VLSIT.2012.6242449
Varistor-type bidirectional switch (J<inf>MAX</inf>&#x003E;10<sup>7</sup>A/cm<sup>2</sup>, selectivity&#x223C;10<sup>4</sup>) for 3D bipolar resistive memory arrays
resolves10.1109/IEDM.2012.6478967
Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
resolves10.1021/nl203687n
A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
resolves10.1088/0957-4484/22/25/254003
Electrochemical metallization memories—fundamentals, applications, prospects
resolves10.1109/IEDM.2014.7047000
High-drive current (&#x003E;1MA/cm<sup>2</sup>) and highly nonlinear (&#x003E;10<sup>3</sup>) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance
resolves10.1021/nl500049g
Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices
What this badge says. CiteStamped means the CHECKABLE references of this
work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record
Embed this badge
Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.
<a href="https://citestamp.com/citestamped/10.1109/led.2016.2530942"><img src="https://citestamp.com/citestamped/10.1109/led.2016.2530942/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[](https://citestamp.com/citestamped/10.1109/led.2016.2530942)