Reference health

Two-Step Mesa Structure GaN p-n Diodes With Low ON-Resistance, High Breakdown Voltage, and Excellent Avalanche Capabilities

https://doi.org/10.1109/led.2019.2955720

20/20 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 20 checked references that resolve

resolves10.1109/LED.2011.2167125

Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

resolves10.1109/TED.2013.2266664

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

resolves10.1109/LED.2013.2294175

3.7 kV Vertical GaN PN Diodes

resolves10.1109/TED.2014.2360861

Vertical Power p-n Diodes Based on Bulk GaN

resolves10.1109/LED.2015.2456914

Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates

resolves10.1016/j.microrel.2015.07.012

Reliability studies of vertical GaN devices based on bulk GaN substrates

resolves10.1002/pssa.201700501

Direct Observation of High Current Density Area by Microscopic Electroluminescence Mapping in Vertical GaN p–n Junction Diodes

resolves10.7567/JJAP.57.04FG09

5.0 kV breakdown-voltage vertical GaN p–n junction diodes

resolves10.7567/1347-4065/ab0cfa

4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability

resolves10.1109/JQE.2009.2022046

Double Mesa Sidewall Silicon Carbide Avalanche Photodiode

resolves10.1088/1361-6463/aaaf9d

The 2018 GaN power electronics roadmap

resolves10.1007/978-3-642-04830-2

Technology of Gallium Nitride Crystal Growth

resolves10.1109/LED.2015.2478907

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

resolves10.7567/JJAP.52.028007

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

resolves10.1109/LED.2015.2474817

4-kV and 2.8-$\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents

resolves10.1016/j.nimb.2017.05.034

Ion-irradiation damage on GaN p-n junction diodes by inductively coupled plasma etching and its recovery by thermal treatment

resolves10.1002/pssc.200674719

Thermal and electrical properties of high‐quality freestanding GaN wafers with high carrier concentration

resolves10.1016/j.jcrysgro.2007.10.014

Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

resolves10.1002/pssa.201000976

Over 1.0 kV GaN p–n junction diodes on free‐standing GaN substrates

resolves10.5573/JSTS.2018.18.5.645

Gallium Nitride PIN Avalanche Photodiode with Double-step Mesa Structure

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

view as graph · paper page

Embed this badge

Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.

<a href="https://citestamp.com/citestamped/10.1109/led.2019.2955720"><img src="https://citestamp.com/citestamped/10.1109/led.2019.2955720/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>

[![CiteStamped reference-health badge](https://citestamp.com/citestamped/10.1109/led.2019.2955720/badge.svg)](https://citestamp.com/citestamped/10.1109/led.2019.2955720)