Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 34 checked references that resolve
resolves10.3390/cryst10090804Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films
resolves10.1038/s41565-018-0204-1Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls
resolves10.1039/d1tc04170cConductivity and memristive behavior of completely charged domain walls in reduced bidomain lithium niobate
resolves10.1063/1.5128611Resistance switching in two-terminal ferroelectric-semiconductor lateral heterostructures
resolves10.1002/adfm.202207418In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO<sub>3</sub> Interfaces
resolves10.1002/adfm.201101521Sub‐Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments
resolves10.1063/1.5050490Low-frequency charge trapping and bistable domain switching in Mg-doped LiNbO3 single crystal films
resolves10.1021/acsami.0c22969Size-Controlled Polarization Retention and Wall Current in Lithium Niobate Single-Crystal Memories
resolves10.1063/1.4938386Thickness, humidity, and polarization dependent ferroelectric switching and conductivity in Mg doped lithium niobate
resolves10.1016/j.mseb.2014.05.012Enhancement of magnetic and ferroelectric properties of BiFeO3 by Er and transition element (Mn, Co) co-doping
resolves10.1007/s10853-021-06040-8Improved polarization retention in LiNbO3 single-crystal memory cells with enhanced etching angles
resolves10.1063/5.0101067Conductive domain walls in <i>x</i>-cut lithium niobate crystals
resolves10.1038/nnano.2015.114Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
resolves10.1002/adma.202103680Disentangling Ferroelectric Wall Dynamics and Identification of Pinning Mechanisms via Deep Learning
resolves10.1038/nmat4878Functional electronic inversion layers at ferroelectric domain walls
resolves10.1063/1.1806274Impact of HfO2 buffer layers on data retention characteristics of ferroelectric-gate field-effect transistors
resolves10.1063/5.0006353Enhanced ferroelectric polarization in epitaxial superconducting–ferroelectric heterostructure for non-volatile memory cell
checked 2026-07-23 — re-checked daily as this page is visited;
titles and statuses come from Crossref and DataCite and are not part of the signed record
Both snippets point at the live badge image and link back to this page. The
badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.