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Nonvolatile Ferroelectric LiNbO<sub>3</sub> Domain Wall Crossbar Memory

https://doi.org/10.1109/led.2023.3240762
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22/22 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 22 checked references that resolve
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Domain-Wall <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>p</mml:mi></mml:math> - <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>n</mml:mi></mml:math> Junction in Lithium Niobate Thin Film on an Insulator
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resolves10.1002/adfm.202000109
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resolves10.1038/s41586-018-0551-y
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resolves10.1126/science.1218693
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resolves10.1007/s12274-021-3899-5
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resolves10.1002/adma.201502975
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resolves10.1063/1.1644917
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resolves10.1126/science.aad8609
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resolves10.1002/adma.201302047
High‐Performance and Low‐Power Rewritable SiO<i><sub>x</sub></i> 1 kbit One Diode–One Resistor Crossbar Memory Array
resolves10.1126/science.280.5370.1716
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Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 10<sup>9</sup>
resolves10.1021/nl203206h
Flexible Memristive Memory Array on Plastic Substrates
resolves10.1021/nn3028776
High Current Density and Nonlinearity Combination of Selection Device Based on TaO<sub><i>x</i></sub>/TiO<sub>2</sub>/TaO<sub><i>x</i></sub> Structure for One Selector–One Resistor Arrays
resolves10.1002/admt.202001219
Sub 20 nm‐Node LiNbO<sub>3</sub> Domain‐Wall Memory
resolves10.1021/acsami.2c05923
Fast Operations of Nonvolatile Ferroelectric Domain Wall Memory with Inhibited Space Charge Injection
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