Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
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The 46 checked references that resolve
resolves10.1021/nn202983nShort-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
resolves10.1038/srep31510A magnetic synapse: multilevel spin-torque memristor with perpendicular anisotropy
resolves10.1109/TBCAS.2015.2414423Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems
resolves10.1038/srep18639Emulating short-term synaptic dynamics with memristive devices
resolves10.1109/TCSI.2020.2978460Theoretical Foundations of Memristor Cellular Nonlinear Networks: A DRM<sub>2</sub>-Based Method to Design Memcomputers With Dynamic Memristors
resolves10.1039/c3cp50738fSwitching kinetics of electrochemical metallization memory cells
resolves10.1039/C8FD00106EImpact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
resolves10.1186/s11671-020-03299-9Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
resolves10.1109/TCSI.2019.2957813Theoretical Foundations of Memristor Cellular Nonlinear Networks: Stability Analysis With Dynamic Memristors
resolves10.1109/TED.2013.2246791A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics
resolves10.1063/1.4963675Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices
resolves10.1038/nmat4856A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
resolves10.1109/TED.2021.3102002Compact Modeling of the Switching Dynamics and Temperature Dependencies in TiO<i>ₓ</i> Memristors—Part II: Physics-Based Model
resolves10.1021/acsnano.7b05726Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing
resolves10.1021/am400168mHigh-Performance Nanocomposite Based Memristor with Controlled Quantum Dots as Charge Traps
resolves10.1109/TED.2018.2833208Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design
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