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Source-Drain Series Resistance Model for <i>N</i>-Stack Nanosheet FETs Using Transmission Line Matrix Method

https://doi.org/10.1109/ted.2024.3465452
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The 25 checked references that resolve
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Fringe Capacitance Modeling in NanoPlate MOSFET Using Conformal Mapping
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Parasitic Capacitance Model for Stacked Gate-All-Around Nanosheet FETs
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Parasitic Gate Capacitance Model for N-Stack Forksheet FETs
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Advanced model and analysis of series resistance for CMOS scaling into nanometer regime. I. Theoretical derivation
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resolves10.1109/TED.2009.2028377
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Impact of series resistance on Si nanowire MOSFET performance
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resolves10.1109/TED.2022.3143473
Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node
resolves10.1109/EDL.1985.26094
The spreading resistance of MOSFET's
resolves10.1109/TED.2023.3270398
Analytical Parasitic Resistance and Capacitance Models for Nanosheet Field-Effect Transistors
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The Transmission-Line Matrix Method--Theory and Applications
resolves10.1109/TED.2020.2988858
A Predictive 3-D Source/Drain Resistance Compact Model and the Impact on 7 nm and Scaled FinFETs
resolves10.1109/TED.2017.2673859
Impact of Equivalent Oxide Thickness on Threshold Voltage Variation Induced by Work-Function Variation in Multigate Devices
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Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
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Analytical Physics-Based Modeling of Electron Channel Density in Nanosheet and Nanowire Transistors
resolves10.1109/TED.2022.3181575
Design Insights of Nanosheet FET and CMOS Circuit Applications at 5-nm Technology Node
resolves10.1109/TED.2022.3182300
Leakage Optimization of the Buried Oxide Substrate of Nanosheet Field-Effect Transistors
resolves10.1109/TDMR.2022.3181672
Design Optimization of Three-Stacked Nanosheet FET From Self-Heating Effects Perspective
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The 5 references without a DOI — listed, not checked
no DOI — not checkedIRDS 2022 Roadmap
no DOI — not checkedDetermination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects
no DOI — not checkedAnalytical model for parasitic resistance of N-stack forksheet FETs using modified transmission line method
no DOI — not checkedAtlas User Manual: Device Simulation Software
no DOI — not checkedStacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
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