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Thermal Conductivity of β‐Si <sub>3</sub> N <sub>4</sub> : II, Effect of Lattice Oxygen
15/15 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 15 checked references that resolve
resolves10.1111/j.1151-2916.1999.tb02209.x
Thermal Conductivity of ß‐Si3N4: I, Effects of Various Microstructural Factors
resolves10.1111/j.1151-2916.1999.tb01835.x
Effect of Grain Size on the Thermal Conductivity of Si
<sub>3</sub>
N
<sub>4</sub>
resolves10.1111/j.1151-2916.1989.tb06027.x
Thermodynamic and Kinetic Effects of Oxygen Removal on the Thermal Conductivity of Aluminum Nitride
resolves10.1111/j.1151-2916.1991.tb06914.x
Phase Composition, Oxygen Content, and Thermal Conductivity of AIN(Y
<sub>2</sub>
O
<sub>3</sub>
) Ceramics
resolves10.1111/j.1151-2916.1997.tb03000.x
High‐Thermal‐Conductivity Aluminum Nitride Ceramics: The Effect of Thermodynamic, Kinetic, and Microstructural Factors
resolves10.1016/0955-2219(91)90087-G
Determination of the concentration of oxygen dissolved in the AlN lattice by hot gas extraction from AlN ceramics
resolves10.1111/j.1151-2916.1997.tb03027.x
Electron Spin Resonance Analysis of Lattice Defects in Polycrystalline Aluminum Nitride
resolves10.1103/PhysRevB.52.8904
⋅Si≡<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>defect at thermally grown (111)Si/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>interfaces
resolves10.2109/jcersj.107.930
Control of .BETA.-Si3N4 Crystal Morphology and Its Mechanism. (Part 1). Effect of SiO2 and Y2O3 Ratio.
resolves10.1111/j.1151-2916.1977.tb14089.x
Grain Boundary Phases in a Hot‐Pressed MgO Fluxed Silicon Nitride
resolves10.1111/j.1151-2916.1989.tb06003.x
Microstructural Changes in β‐Silicon Nitride Grains upon Crystallizing the Grain‐Boundary Glass
The 1 reference without a DOI — listed, not checked
no DOI — not checkedM.OkazakiandK.Toriyama; unpublished work (1999).
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