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Thermal Conductivity of β‐Si <sub>3</sub> N <sub>4</sub> : III, Effect of Rare‐Earth (RE = La, Nd, Gd, Y, Yb, and Sc) Oxide Additives
21/21 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
4 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 21 checked references that resolve
resolves10.1111/j.1151-2916.1999.tb02209.x
Thermal Conductivity of ß‐Si3N4: I, Effects of Various Microstructural Factors
resolves10.1111/j.1151-2916.2000.tb01501.x
Thermal Conductivity of β‐Si
<sub>3</sub>
N
<sub>4</sub>
: II, Effect of Lattice Oxygen
resolves10.1111/j.1151-2916.1974.tb10806.x
Consolidation, Microstructure, and Mechanical Properties of Si
<sub>3</sub>
N
<sub>4</sub>
Doped with Rare‐Earth Oxides
resolves10.1111/j.1151-2916.1981.tb10289.x
A New Si
<sub>3</sub>
N
<sub>4</sub>
Material: Phase Relations in the System Si‐Sc‐O‐N and Preliminary Property Studies
resolves10.1111/j.1151-2916.1988.tb05036.x
Sintering of Si
<sub>3</sub>
N
<sub>4</sub>
with the Addition of Rare‐Earth Oxides
resolves10.1007/BF00726533
Gas-pressure sintering of silicon nitride containing small amounts of oxide additives
resolves10.1111/j.1151-2916.1996.tb08721.x
Thermal Conductivity of Gas‐Pressure‐Sintered Silicon Nitride
resolves10.1111/j.1151-2916.1997.tb02892.x
Microstructural Evolution and Mechanical Properties of Si
<sub>3</sub>
N
<sub>4</sub>
with Yb
<sub>2</sub>
O
<sub>3</sub>
as a Sintering Additive
resolves10.1111/j.1151-2916.1997.tb02972.x
Pressureless Sintering of Si
<sub>3</sub>
N
<sub>4</sub>
Ceramic Using AlN and Rare‐Earth Oxides
resolves10.1111/j.1151-2916.1997.tb03187.x
Microstructural Evolution of Gas‐Pressure‐Sintered Si
<sub>3</sub>
N
<sub>4</sub>
with Yb
<sub>2</sub>
O
<sub>3</sub>
as a Sintering Aid
resolves10.1007/BF00719733
Ionic radii and electronegativities of effective sintering aids for Si3N4 ceramics
resolves10.1111/j.1151-2916.1995.tb08362.x
Formation and Properties of Ln‐Si‐O‐N Glasses (Ln = Lanthanides or Y)
resolves10.1111/j.1151-2916.1992.tb07833.x
Elastic Properties and Molar Volume of Rare‐Earth Aluminosilicate Glasses
resolves10.1007/978-94-011-0992-5_4
Analysis of Microstructural Development and Mechanical Properties of Si3N4 Ceramics
resolves10.2109/jcersj.107.995
Control of .BETA.-Si3N4 Crystal Morphology and Its Mechanism. (Part 2). Effect of Lanthanide Additives.
resolves10.1111/j.1151-2916.1997.tb03000.x
High‐Thermal‐Conductivity Aluminum Nitride Ceramics: The Effect of Thermodynamic, Kinetic, and Microstructural Factors
resolves10.2109/jcersj.97.174
Temperature Dependence of Thermal Coefficients for HIPped Silicon Nitride
resolves10.1557/JMR.1995.0240
Phase relationships in the system Si<sub>3</sub>N<sub>4</sub>–SiO<sub>2</sub>–Yb<sub>2</sub>O<sub>3</sub>
The 4 references without a DOI — listed, not checked
no DOI — not checkedStrength and Microstructure of Sintered Si3N4 wih Rare‐Earth Oxide Additions
no DOI — not checkedGas‐Pressure Sintering of Si3N4 with Concurrent Addition of Al2O3 and 5 wt% Rare Earth Oxide: High Fracture Toughness Si3N4 with Fiber‐like Structure
no DOI — not checkedPhase Diagrams for Ceramics
no DOI — not checkedM.Kitayama K.Hirao M.Toriyama andS.Kanzaki unpublished work.
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work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
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