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<i>In Situ</i> High‐Temperature Diffraction Study of the Thermal Dissociation of Ti <sub>3</sub> AlC <sub>2</sub> in Vacuum

https://doi.org/10.1111/j.1551-2916.2010.03764.x
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

8 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 29 checked references that resolve
resolves10.1016/j.actamat.2005.05.034
Microstructure and mechanical properties of porous TiSiC
resolves10.1016/S0022-3697(98)00226-1
STRUCTURE AND CRYSTAL CHEMISTRY OF Ti3SiC2
resolves10.1016/S1359-6462(96)00418-6
Layered machinable ceramics for high temperature applications
resolves10.1016/S0266-3538(02)00285-3
The morphology of oxides and oxidation behavior of Ti3SiC2-based composite at high-temperature
resolves10.1016/j.msea.2007.02.034
Characterisation of phase relations and properties in air-oxidised Ti3SiC2
resolves10.1111/j.1151-2916.1998.tb02320.x
Contact Damage Accumulation in Tic <sub>3</sub> SiC <sub>2</sub>
resolves10.1016/S0955-2219(97)00201-X
Vickers contact damage of micro-layered Ti3SiC2
resolves10.1007/BF00352037
Solid-state synthesis and characterization of the ternary phase Ti3SiC2
resolves10.1016/j.actamat.2005.05.020
Effects of temperature, strain rate and grain size on the compressive properties of Ti3SiC2
resolves10.1016/j.msea.2006.07.060
High-temperature oxidation of Ti3AlC2 between 1173 and 1473K in air
resolves10.1111/j.1151-2916.2000.tb01281.x
Synthesis and Characterization of Ti <sub>3</sub> AlC <sub>2</sub>
resolves10.1016/S1003-6326(06)60318-X
High-temperature oxidation behavior of Ti3AlC2 in air
resolves10.1016/S0010-938X(02)00177-4
Oxidation behavior of Ti3AlC2 at 1000–1400 °C in air
resolves10.1070/MC1999v009n01ABEH001039
Electronic structure of hexagonal Ti3AlC2 and Ti3AlN2
resolves10.1039/b101520f
Electronic and structural properties of the layered ternary carbide Ti3AlC2
resolves10.1088/0953-8984/13/44/313
<i>Ab initio</i>geometry optimization and ground state properties of layered ternary carbides Ti<sub>3</sub>MC<sub>2</sub>(M = Al, Si and Ge)
resolves10.1007/BF02647559
Summary of constitutional data on the Aluminum-Carbon-Titanium system
resolves10.1021/cm030022v
Stability and Selective Oxidation of Aluminum in Nano-Laminate Ti<sub>3</sub>AlC<sub>2</sub> upon Heating in Argon
resolves10.1016/j.matchemphys.2007.02.091
Thermal stability of Ti3AlC2/Al2O3 composites in high vacuum
resolves10.1111/j.1551-2916.2007.01817.x
Effect of Vacuum Annealing on the Phase Stability of Ti <sub>3</sub> SiC <sub>2</sub>
resolves10.1016/j.physb.2006.05.255
Dynamic study of the thermal stability of impure Ti3SiC2 in argon and air by neutron diffraction
resolves10.1016/j.matlet.2003.07.038
Depth profiling of phase composition in a novel Ti3SiC2–TiC system with graded interfaces
resolves10.1111/j.1551-2916.2007.02018.x
Titanium Silicon Carbide Pest Induced by Nitridation
resolves10.1016/j.actamat.2006.10.010
Thermal stability of Ti3SiC2 thin films
resolves10.1016/S0955-2219(99)00166-1
Influence of small amounts of Fe and V on the synthesis and stability of Ti 3 SiC 2
resolves10.1016/S0925-8388(99)00003-1
Synthesis and high-temperature stability of Ti3SiC2
resolves10.1016/j.jallcom.2005.12.112
Synthesis of Ti3SiC2 from powder blend of Ti, Si and TiC
resolves10.1016/j.jallcom.2007.02.105
Synthesis of high-purity polycrystalline Ti3AlC2 through pulse discharge sintering Ti/Al/TiC powders
resolves10.1016/j.msea.2007.04.009
Low temperature synthesis of single-phase Ti3AlC2 through reactive sintering Ti/Al/C powders
The 8 references without a DOI — listed, not checked
no DOI — not checkedThe MAX Phases
no DOI — not checkedThe M N+1AX N Phases
no DOI — not checkedComparison of Thermal Stability in MAX 211 and 312 Phases at 1500°C in Vacuum
no DOI — not checkedSynthesis and Mechanical Properties of Ti3SiC2
no DOI — not checkedSynthesis and Characterization of a Remarkable Ceramic
no DOI — not checkedA Progress Report on Ti3SiC2, Ti3GeC2, and H‐Phases, M2BX
no DOI — not checkedProcessing and Mechanical Properties of Ti3SiC2
no DOI — not checkedSelf‐Propagating High‐Temperature Synthesis of Ti3SiC2
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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