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Effective Nitrogen Doping for Fabricating Highly Conductive <scp> <scp>β‐SiC</scp> </scp> Ceramics

https://doi.org/10.1111/j.1551-2916.2011.04799.x
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18/18 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 18 checked references that resolve
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Effect of grain boundary segregation on thermal conductivity of hot-pressed silicon carbide
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Interface characteristics affecting electrical properties of Y-doped SiC
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Characterization, Modeling, and Application of 10-kV SiC MOSFET
resolves10.1111/j.1551-2916.2011.04419.x
Electrodischarge‐Machinable Silicon Carbide Ceramics Sintered with Yttrium Nitrate
resolves10.1111/j.1151-2916.1993.tb03677.x
Core/Rim Structure of Liquid‐Phase‐Sintered Silicon Carbide
resolves10.1016/S1359-6454(98)00371-1
Coarsening in liquid-phase-sintered α-SiC
resolves10.1103/RevModPhys.40.815
Semiconductor-to-Metal Transition in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Group IV Semiconductors
resolves10.1103/PhysRevB.22.2842
Site effect on the impurity levels in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mn>5</mml:mn><mml:mi>R</mml:mi></mml:math>SiC
resolves10.1103/PhysRevB.60.16479
Doping-induced effects on the band structure in<i>n</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>3</mml:mn><mml:mi>C</mml:mi><mml:mo>−</mml:mo><mml:mo>,</mml:mo></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>2</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mo>,</mml:mo></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mo>,</mml:mo></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mi mathvariant="normal">C</mml:mi><mml:mo>,</mml:mo></mml:math>and Si
resolves10.1023/A:1004881430804
Effects of additives on densification, microstructure and properties of liquid-phase sintered silicon carbide
resolves10.1016/S0955-2219(02)00006-7
Compositional identification of the intergranular phase in liquid phase sintered SiC
resolves10.1016/j.actamat.2006.05.020
Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide
The 1 reference without a DOI — listed, not checked
no DOI — not checkedVanadium‐Doped Semi‐Insulating 6H‐SiC for Microwave Power Device Applications
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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