Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 41 checked references that resolve
resolves10.1111/jace.13805Tribological Performance of Aligned Silicon Nitride Ceramics under Isooctane‐Lubricated Oscillating Sliding Conditions
resolves10.1002/9780470314715.ch52Opportunities for Enhancing the Thermal Conductivities of SiC and Si3N4 Ceramics Through Improved Processing
resolves10.1111/j.1151-2916.2001.tb00662.xThermal Conductivity of β‐Si
<sub>3</sub>
N
<sub>4</sub>
: III, Effect of Rare‐Earth (RE = La, Nd, Gd, Y, Yb, and Sc) Oxide Additives
resolves10.1557/JMR.1999.0206Hot Isostatic Pressing to Increase Thermal Conductivity of Si<sub>3</sub>N<sub>4</sub> Ceramics
resolves10.1016/j.jallcom.2014.01.131Effect of particle size and oxygen content of Si on processing, microstructure and thermal conductivity of sintered reaction bonded Si3N4
resolves10.1016/j.jeurceramsoc.2013.11.040Sintered reaction-bonded silicon nitrides with high thermal conductivity: The effect of the starting Si powder and Si3N4 diluents
resolves10.1088/1468-6996/11/6/065001Potential use of only Yb<sub>2</sub>O<sub>3</sub>in producing dense Si<sub>3</sub>N<sub>4</sub>ceramics with high thermal conductivity by gas pressure sintering
resolves10.1016/j.jeurceramsoc.2005.10.011Effect of post-sintering heat-treatment on thermal and mechanical properties of Si3N4 ceramics sintered with different additives
resolves10.1111/j.1551-2916.2006.01462.xProcessing and Thermal Conductivity of Sintered Reaction‐Bonded Silicon Nitride: (II) Effects of Magnesium Compound and Yttria Additives
resolves10.1557/JMR.2004.0416Influence of additive composition on thermal and mechanical properties of β–Si<sub>3</sub>N<sub>4</sub> ceramics
resolves10.4028/www.scientific.net/AMR.105-106.171Thermal Conductivity and Mechanical Property of Si<sub>3</sub>N<sub>4</sub> Ceramics Sintered with CeF<sub>3</sub>/LaF<sub>3</sub> Additives
resolves10.1149/1.2203101Preparation, Structure, and Luminescence Properties of Y[sub 2]Si[sub 4]N[sub 6]C:Ce[sup 3+] and Y[sub 2]Si[sub 4]N[sub 6]C:Tb[sup 3+]
resolves10.1111/j.1551-2916.2011.04571.xColor‐tunable Y
<sub>2</sub>
Si
<sub>4</sub>
N
<sub>6</sub>
C:Ce
<sup>3+</sup>
Carbonitride Phosphors for Ultraviolet Light‐Emitting Diodes
resolves10.1039/b006053oThe crystal structure of Y3Si5N9O and revision of the compositions of some high nitrogen-containing M–Si–O–N (M = Y, La) phases
resolves10.1016/0022-3093(88)90163-9Ab initio molecular orbital calculation of the interatomic potential and force constants in silicon oxynitride glass
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