Reference health
Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases
1 of 43 checkable references need attention · checked 2026-07-23
At the dated check, the references listed below either did not resolve in Crossref or DataCite, or carried a retraction notice. Each one is shown with the registry record that put it there.
8 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
References needing attention
does not resolve to a known work10.1002/1616-3028(20020418)12:4<266::AID-ADFM266>3.0.CO;2-U
The 42 checked references that resolve
resolves10.1016/S0042-207X(00)00127-5
Real-time spectroscopic ellipsometry for III–V surface modifications Hydrogen passivation, oxidation and nitridation by plasma processing
resolves10.1143/JJAP.40.4454
The Effective Control of Pd/GaAs Interface by Sulfidation and Thermal Hydrogenation
resolves10.1016/S0169-4332(01)00840-6
Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer
resolves10.1016/j.vacuum.2005.11.067
XPS study of surface chemistry of epiready GaAs(100) surface after (NH4)2Sx passivation
resolves10.1063/1.125734
Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities
resolves10.1149/1.2136072
Coating and Passivation of InP–InGaAs Devices by Organic Self-Assembled Monolayers
resolves10.1116/1.589018
Sulfur contamination of (100) GaAs resulting from sample preparation procedures and atmospheric exposure
resolves10.1143/JJAP.39.7003
Amelioration of the Interfacial Properties in Au/GaAs Schottky Contact Using Sulfidation and Hydrogenation
resolves10.1039/b108683a
Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density
resolves10.1117/12.605649
Surface passivation of (001) GaAs with self-assembled monolayers of long-chain thiols
resolves10.1063/1.113357
Near-surface electronic structure in GaAs (100) modified with self-assembled monolayers of octadecylthiol
resolves10.1021/ja058657d
Molecular Self-Assembly at Bare Semiconductor Surfaces: Preparation and Characterization of Highly Organized Octadecanethiolate Monolayers on GaAs(001)
resolves10.1016/S0040-6090(98)01414-X
Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density
resolves10.1016/S0039-6028(03)00239-5
Characterization of self-assembled monolayers of alkanethiol on GaAs surface by contact angle and angle-resolved XPS measurements
resolves10.1116/1.2218850
X-ray photoelectron spectroscopy study of self-assembled monolayers of alkanethiols on (001) GaAs
resolves10.1116/1.2981067
Properties of octadecanethiol self-assembled monolayers deposited on GaAs from liquid and vapor phases
resolves10.1021/cm9704995
Passivation of GaAs (100) with an Adhesion Promoting Self-Assembled Monolayer
resolves10.1143/JJAP.30.3759
GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties
resolves10.1063/1.2743729
X-ray photoelectron spectroscopic study of the formation of catalytic gold nanoparticles on ultraviolet-ozone oxidized GaAs(100) substrates
resolves10.1021/jp065173a
Molecular Self-Assembly at Bare Semiconductor Surfaces: Investigation of the Chemical and Electronic Properties of the Alkanethiolate−GaAs(001) Interface
resolves10.1021/jp9822485
Electron Tunneling at the Semiconductor−Insulator−Electrolyte Interface. Photocurrent Studies of the<i>n</i>-InP−Alkanethiol−Ferrocyanide System
resolves10.1049/el:19950911
Suppression of bandgap shifts inGaAs/AlGaAs multiquantum wellsusing hydrogen plasma processing
resolves10.1143/JJAP.31.L1157
Effect of Atomic Hydrogen on GaAs (001) Surface Oxide Studied by Temperature-Programmed Desorption
resolves10.1021/jp075968x
Adsorption Kinetics of Hydrogen Sulfide and Thiols on GaAs (001) Surfaces in a Vacuum
resolves10.1149/1.1837749
Reduction of Recombination Velocity on GaAs Surface by Ga‐S and As‐S Bond‐Related Surface States from ( NH 4 ) 2 S x Treatment
resolves10.1016/j.susc.2005.11.030
Monolayer vs. multilayer self-assembled alkylphosphonate films: X-ray photoelectron spectroscopy studies
resolves10.1103/PhysRevB.50.8609
Hydrogen adsorption on GaAs(110): A study of the surface optical properties
resolves10.1103/PhysRevB.54.17175
Chemistry and kinetics of the interaction of hydrogen atoms with (100) InP surfaces: An<i>in</i><i>situ</i>real-time ellipsometric study
resolves10.1016/0009-2614(95)01085-N
Optical characterization of electronic transitions arising from the Au/S interface of self-assembled n-alkanethiolate monolayers
resolves10.1116/1.588059
Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs
resolves10.1149/1.1394112
Chemical Etching Characteristics of GaAs(100) Surfaces in Aqueous HF Solutions
The 8 references without a DOI — listed, not checked
no DOI — not checked2023071520591143200_c20
no DOI — not checked2023071520591143200_c21
no DOI — not checked2023071520591143200_c24
no DOI — not checked2023071520591143200_c25
no DOI — not checked2023071520591143200_c29
no DOI — not checked2023071520591143200_c36
no DOI — not checkedVeeco Application Note No. 3/98 (online), September 1998 (http://www.veeco.com/pdfs/appnotes/98sept_ahs_78.pdf) (accessed September 13, 2008).
no DOI — not checked2023071520591143200_c50
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